Epitaxial Graphene Transistors on SiC Substrates

• Published in: IEEE transactions on electron devices 2008-08, Vol.55 (8), p.2078-2085
• Main Authors: Kedzierski, Jakub, Hsu, Pei-Lan, Healey, Paul, Wyatt, Peter W., Keast, Craig L., Sprinkle, Mike, Berger, Claire, de Heer, Walt A.
• Format: Article
• Language: English
• Subjects: Applied sciences; Brightness; Carbon devices; carbon transistors; Devices; Electronics; Energy gaps (solid state); epitaxial graphene; Epitaxy; Exact sciences and technology; Graphene; graphene devices; graphene transistors; hbox{HfO}_{2} dielectric; high mobility; high- k dielectric; Leakage current; Logic gates; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; semimetal; SiC; Silicon; Silicon carbide; Substrates; thin-film transistors; Transistors
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2008.926593

This paper describes the behavior of top-gated transistors fabricated using carbon, specifically epitaxial graphene on SiC, as the active material. Although graphene devices have been built before, in this paper, we provide the first demonstration and systematic evaluation of arrays of a large number of transistors produced using standard microelectronics methods. The graphene devices presented feature high-k dielectric, mobilities up to 5000 cm 2 /Vldr s, and I on /I off ratios of up to seven, and are methodically analyzed to provide insight into the substrate properties. Typical of graphene, these micrometer-scale devices have negligible band gaps and, therefore, large leakage currents.