Thermodynamics and Transport Model of Charge Injection in Silicon Irradiated by a Pulsed Focused Laser

Focused pulsed visible laser used in laser-trimming technologies such as the laser diffused-resistor process may inject charges in the semiconductor, leading to an interaction with highly sensitive circuits. In order to evaluate the process impact on those circuits, a study of the perturbation on th...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-10, Vol.55 (10), p.2728-2735
Main Authors: Boulais, E., Binet, V., Degorce, J.-Y., Wild, G., Savaria, Y., Meunier, M.
Format: Article
Language:English
Subjects:
Applied sciences
Charge injection
Circuit properties
Electric power generation
Electric, optical and optoelectronic circuits
Electrical engineering. Electrical power engineering
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
finite-element model
Integrated circuit modeling
Laser modes
laser trimming
Lasers
Mathematical model
Mathematical models
Oscillators
Oscillators, resonators, synthetizers
Power electronics, power supplies
Power lasers
Ring lasers
Semiconductor lasers
Semiconductors
Silicon
substrate effect
Substrates
temperature effect
Thermodynamics
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Summary:Focused pulsed visible laser used in laser-trimming technologies such as the laser diffused-resistor process may inject charges in the semiconductor, leading to an interaction with highly sensitive circuits. In order to evaluate the process impact on those circuits, a study of the perturbation on the free-running frequency of a ring oscillator due to a nearby laser pulse has been made. The behavior of this modification as a function of the laser-pulse power exhibits complex features. A thermodynamics and electrical model of the charge injection by a focused pulsed laser on silicon has been developed. First, the laser-induced charge diffusion is calculated by a finite-element-model coupling Boltzmann semiclassical transport and thermodynamic equations; the last one being necessary, as relatively high laser power may increase significantly the local temperature. The result is then fed into an electrical model of the ring oscillator as a perturbation injected by a current source. This model coupled to parasitic-light effects due to geometrical changes during silicon melting is able to explain the oscillator's operation-frequency modification.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.2003027