Solution-Crystallized Organic Field-Effect Transistors with Charge-Acceptor Layers: High-Mobility and Low-Threshold-Voltage Operation in Air

High‐mobility solution‐processed organic transistors are developed based on a hybrid of solution‐crystallized air‐stable organic semiconductor 2,7‐dioctyl[1]ben­zo­thieno[3,2‐b][1] benzothiophene (C8‐­ BTBT) and 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetra­cy­anoquinodimethane (F4‐TCNQ) top layers. Charge mobi...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2011-08, Vol.23 (29), p.3309-3314
Main Authors: Soeda, Junshi, Hirose, Yuri, Yamagishi, Masakazu, Nakao, Akiko, Uemura, Takafumi, Nakayama, Kengo, Uno, Mayumi, Nakazawa, Yasuhiro, Takimiya, Kazuo, Takeya, Jun
Format: Article
Language:English
Subjects:
Air
Benzothiophene
Crystallization
Crystals
Electricity
Field effect transistors
Nitriles - chemistry
organic field-effect transistors
Organic semiconductors
organic single-crystal transistors
Quantum Theory
Semiconductor devices
solution-processed transistors
Solutions - chemistry
Thiophenes - chemistry
Transistors
Transistors, Electronic
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Summary:High‐mobility solution‐processed organic transistors are developed based on a hybrid of solution‐crystallized air‐stable organic semiconductor 2,7‐dioctyl[1]ben­zo­thieno[3,2‐b][1] benzothiophene (C8‐­ BTBT) and 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetra­cy­anoquinodimethane (F4‐TCNQ) top layers. Charge mobility as high as 6 cm2/Vs is achieved, owing to the almost perfectly periodic crystal packing and efficient charge supply from the acceptor.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201101027