Construction of conducting and photoconducting 3D structures with submicron resolution in electrooptical substrates

It is shown that the implantation of protons in electrooptical substrates enables the construction of 3D structures with submicron features that are both conductive and photoconductive embedded in amorphized regions that possess reduced refractive index. The conductivity and photoconductivity are at...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2011-01, Vol.102 (1), p.45-48
Main Authors: Siman-Tov, Heli, Gumennik, Alexander, Ilan, Har’el, Mazursky, Noa, Agranat, Aharon J.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Condensed Matter Physics
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Construction
Devices
Electronic transport in condensed matter
Electrooptical
Exact sciences and technology
Implantation
Machines
Manufacturing
Nanotechnology
Optical and Electronic Materials
Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Photoconduction and photovoltaic effects
photodielectric effects
Physics
Physics and Astronomy
Processes
Rapid Communication
Refractive index
Refractivity
Semiconductors
Surfaces and Interfaces
Thin Films
Three dimensional
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:It is shown that the implantation of protons in electrooptical substrates enables the construction of 3D structures with submicron features that are both conductive and photoconductive embedded in amorphized regions that possess reduced refractive index. The conductivity and photoconductivity are attributed to the transformation of the material into a degenerate semiconductor due to the formation of high concentration of OH − complexes that are created by the bonding of the implanted H + ions to the O −2 ions of the lattice. It is argued that these results extend significantly the capabilities of integrated photonic circuits and devices fabricated by Refractive Index Engineering by ion implantations.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-010-6064-7