Large current peak-to-valley ratio observed in CdSe quantum dot/MEH-PPV based nanocomposite heterostructure

In this paper, we show negative differential resistance (NDR) in CdSe quantum dot/MEH-PPV based nanocomposite multi-layer heterostructures at room temperature. The four-layer structure exhibited a maximum peak-to-valley ratio of current of 1190 at room temperature, while two-layer structures show a...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2011-03, Vol.102 (3), p.611-614
Main Authors: Kannan, V., Rajesh, K. R., Kim, M. R., Chae, Y. S., Rhee, J. K.
Format: Article
Language:English
Subjects:
Cadmium selenides
Characterization and Evaluation of Materials
Condensed Matter Physics
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Heterostructures
Intermetallics
Machines
Manufacturing
Materials science
Multilayers
Nanocomposites
Nanomaterials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Quantum dots
Surfaces and Interfaces
Thin Films
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Summary:In this paper, we show negative differential resistance (NDR) in CdSe quantum dot/MEH-PPV based nanocomposite multi-layer heterostructures at room temperature. The four-layer structure exhibited a maximum peak-to-valley ratio of current of 1190 at room temperature, while two-layer structures show a value of 4. Two-, three- and four-layer structures are studied. Each device configuration exhibits different kind of negative differential resistance. The possible mechanism is explained on the basis of tunneling phenomena.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-010-6162-6