Performance improvement of CuxO resistive switching memory by surface modification

The Cu x O films grown by plasma oxidation are composed of an insulating CuO layer and a conductive gradient Cu x O layer. We found that the surface CuO layer influenced the switching behaviors greatly. Giant improvement of reliable endurance was achieved after annealing the device in the N 2 atmosp...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2011-03, Vol.102 (4), p.1015-1018
Main Authors: Lv, Hangbing, Tang, Tingao
Format: Article
Language:English
Subjects:
Annealing
ANNEALING PROCESSES
Characterization and Evaluation of Materials
Condensed Matter Physics
Copper
COPPER OXIDE
CUPRIC OXIDE
CUPROUS OXIDE
Electric potential
ELECTRICAL CONDUCTIVITY
Endurance
FORMING
Machines
Manufacturing
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Plasma (physics)
Processes
Surfaces and Interfaces
Switching
Thin Films
VOLTAGE
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Summary:The Cu x O films grown by plasma oxidation are composed of an insulating CuO layer and a conductive gradient Cu x O layer. We found that the surface CuO layer influenced the switching behaviors greatly. Giant improvement of reliable endurance was achieved after annealing the device in the N 2 atmosphere, resulting from the transition of CuO to Cu 2 O. The possible mechanism for this improvement is attributed to the alleviation of over-programming during forming process. The result shows that for resistance switching Cu 2 O is much more preferred than CuO. After further reducing the thickness of Cu 2 O layer, the forming voltage can be totally eliminated.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-011-6281-8