Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell

Employment of the memristor for the next-generation large-area electronics can be expected to release various devices with interesting functions. In this article, for the first time we proposed a fully transparent memristor cell, which was composed of one-memory thin-film transistor (TFT) and one-sw...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2011-03, Vol.102 (4), p.983-990
Main Authors: Yoon, Sung-Min, Yang, Shinhyuk, Jung, Soon-Won, Byun, Chun-Won, Ryu, Min-Ki, Cheong, Woo-Seok, Kim, ByeongHoon, Oh, HimChan, Ko Park, Sang-Hee, Hwang, Chi-Sun, Kang, Seung-Youl, Ryu, Ho-Jun, Yu, Byoung-Gon
Format: Article
Language:English
Subjects:
Channels
Characterization and Evaluation of Materials
Condensed Matter Physics
Electronics
Ferroelectric materials
Ferroelectricity
Insulators
Machines
Manufacturing
Nanotechnology
Optical and Electronic Materials
Oxides
Physics
Physics and Astronomy
Processes
Semiconductor devices
Surfaces and Interfaces
Thin film transistors
Thin Films
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Summary:Employment of the memristor for the next-generation large-area electronics can be expected to release various devices with interesting functions. In this article, for the first time we proposed a fully transparent memristor cell, which was composed of one-memory thin-film transistor (TFT) and one-switch TFT using an oxide semiconducting active channel. A poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] was used as a gate insulator for the memory TFT and the channel conductance of the TFT was modulated by changing the quantity and direction of ferroelectric polarization. The fabrication procedures were designed so that the proposed transparent memristor cell could be implemented at process temperature below 200°C. It was successfully conformed that the fabricated memristor cell exhibited good TFT behaviors and modulated output characteristics programmed into the memory TFT.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-011-6280-9