Morphological and structural modifications induced in a-Si1−xCx:H films by excimer laser annealing

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2010, Vol.100 (4), p.1163-1168
• Main Authors: Coscia, U., Ambrosone, G., Basa, D. K., Tresso, E., Chiodoni, A., Pinto, N., Murri, R.
• Format: Article
• Language: English
• Subjects: Annealing; Carbon; Carbon content; Characterization and Evaluation of Materials; Condensed Matter Physics; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Excimer lasers; Excimers; Field emission; Lasers; Machines; Manufacturing; Materials science; Nanotechnology; Optical and Electronic Materials; Physics; Physics and Astronomy; Processes; Structure and morphology; thickness; Surfaces and Interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Thin Films
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-010-5729-6

Hydrogenated amorphous silicon carbon films of different carbon content deposited by plasma enhanced chemical vapour deposition on Corning glass and crystalline silicon substrates have been irradiated by an excimer (KrF) laser. The properties of these samples were investigated by X-ray diffraction, field emission scanning electron microscopy and Fourier transform infrared spectroscopy before and after laser treatment, in order to understand the role of the carbon content as well as the substrate in the structural modifications. It has been demonstrated that the changes induced in the films by the laser treatment are independent of the substrate but depend on the carbon content which facilitates the crystallization process.