Free Charge Carriers Trapping Properties in Neutron-Irradiated DOFZ Silicon Pad Detectors

Silicon pad-detectors fabricated from diffused oxygenated silicon were irradiated with reactor neutrons with fluences between 1 times 10 14 n eq /cm 2 and 1 times 10 15 n eq /cm 2 . The transient current technique was used to measure the trapping probability for holes and electrons. The results obta...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2007-12, Vol.54 (6), p.2701-2705
Main Authors: Weber, J., Klingenberg, R.
Format: Article
Language:English
Subjects:
Charge carrier processes
Charge carriers
Charge collection
Diffusion
Electrodes
Electron traps
Fluence
Inductors
Irradiation
Large Hadron Collider
LHC
neutron induced radiation damage of silicon pad detectors
Neutrons
Nuclear engineering
Oxygenated
Radiation detectors
Silicon
Silicon radiation detectors
SuperLHC
Temperature dependence
transient current technique
Trapping
trapping time
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Description
Summary:Silicon pad-detectors fabricated from diffused oxygenated silicon were irradiated with reactor neutrons with fluences between 1 times 10 14 n eq /cm 2 and 1 times 10 15 n eq /cm 2 . The transient current technique was used to measure the trapping probability for holes and electrons. The results obtained support the model of a linear increase with fluence. Also the temperature dependence of the trapping time constant for electrons is investigated. This temperature dependence was found independent on the irradiated fluence.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2007.910855