A Single-Event-Hardened Phase-Locked Loop Fabricated in 130 nm CMOS

A radiation-hardened-by-design phase-locked loop (PLL)-designed and fabricated in 130 nm CMOS-is shown to mitigate single-event transients (SETs). Two-photon-absorption (TPA) laser tests were used to characterize the error signatures of the PLL and to perform single-event upset (SEU) mapping of the...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2007-12, Vol.54 (6), p.2012-2020
Main Authors: Loveless, T.D., Massengill, L.W., Bhuva, B.L., Holman, W.T., Reed, R.A., McMorrow, D., Melinger, J.S., Jenkins, P.
Format: Article
Language:English
Subjects:
Charge measurement
Charge pumps
Clocks
CMOS
Current measurement
Error analysis
Errors
Lasers
Mapping
mixed analog-digital integrated circuits
Performance evaluation
Phase locked loops
phase-locked loops (PLLs)
Pulse measurements
Pump lasers
radiation effects
radiation hardening
radiation-hardened-by-design (RHBD)
RF operation
Signatures
Single event upset
single-event effects (SEEs)
single-event transients (SETs)
Testing
Voltage
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Summary:A radiation-hardened-by-design phase-locked loop (PLL)-designed and fabricated in 130 nm CMOS-is shown to mitigate single-event transients (SETs). Two-photon-absorption (TPA) laser tests were used to characterize the error signatures of the PLL and to perform single-event upset (SEU) mapping of the PLL sub-components. Results show that a custom, voltage-based charge pump reduces the error response of the PLL over conventional designs by more than two orders of magnitude as measured by the number of erroneous PLL clock pulses following a single-event. Additionally, SEU mapping indicates a 99% reduction in the vulnerable area of the radiation-hardened-by-design (RHBD) charge pump over a conventional design. Furthermore, the TPA experiments highlight the importance of the voltage-controlled oscillator in the overall SET response of the PLL implementing the RHBD charge pump.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2007.908166