High-Temperature Stable Ir sub(x)Si Gates With High Work Function on HfSiON p-MOSFETs

A novel 1000 degC-stable Ir sub(x)Si gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2007-01, Vol.54 (2)
Main Authors: Hung, B F, Wu, CH, Chin, Albert, Wang, S J, Yen, F Y, Hou, Y T, Jin, Y, Tao, HJ, Chen, Shih C, Liang, Mong-Song
Format: Article
Language:English
Subjects:
Amorphous silicon
Devices
Equivalence
Gates
Hole mobility
Pinning
Semiconductor devices
Work functions
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Summary:A novel 1000 degC-stable Ir sub(x)Si gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in Ir sub(x)Si/HfSiON transistors. The 1000 degC thermal stability above pure metal (900 degC only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface
ISSN:0018-9383
DOI:10.1109/TED.2006.888626