High-Temperature Stable Ir sub(x)Si Gates With High Work Function on HfSiON p-MOSFETs

A novel 1000 degC-stable Ir sub(x)Si gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2007-01, Vol.54 (2)
Main Authors: Hung, B F, Wu, CH, Chin, Albert, Wang, S J, Yen, F Y, Hou, Y T, Jin, Y, Tao, HJ, Chen, Shih C, Liang, Mong-Song
Format: Article
Language:English
Subjects:
Amorphous silicon
Devices
Equivalence
Gates
Hole mobility
Pinning
Semiconductor devices
Work functions
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page
container_issue 2
container_start_page
container_title IEEE transactions on electron devices
container_volume 54
creator Hung, B F
Wu, CH
Chin, Albert
Wang, S J
Yen, F Y
Hou, Y T
Jin, Y
Tao, HJ
Chen, Shih C
Liang, Mong-Song
description A novel 1000 degC-stable Ir sub(x)Si gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in Ir sub(x)Si/HfSiON transistors. The 1000 degC thermal stability above pure metal (900 degC only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface
doi_str_mv 10.1109/TED.2006.888626
format article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_880658334</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>880658334</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_8806583343</originalsourceid><addsrcrecordid>eNqNir1uwjAURj2AVAqdu96tZUhw4tQyc_kJQ5shqRiRQZfGNIlTX1vq4zdIPADSkT6dT4ex54THScKXi2q9ilPOZayUkqkcsQnniYqWQokH9kh0GVRmWTphX7n5rqMK2x6d9sEhlF4fG4SdAwrH1795aWCrPRLsja_hmsPeuh_YhO7kje1gID-XpviEPvooys26ohkbn3VD-HTbKXsZ7vc86p39DUj-0Bo6YdPoDm2gg1JcvikhMnF_-Q-i-UZz</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>880658334</pqid></control><display><type>article</type><title>High-Temperature Stable Ir sub(x)Si Gates With High Work Function on HfSiON p-MOSFETs</title><source>IEEE Xplore (Online service)</source><creator>Hung, B F ; Wu, CH ; Chin, Albert ; Wang, S J ; Yen, F Y ; Hou, Y T ; Jin, Y ; Tao, HJ ; Chen, Shih C ; Liang, Mong-Song</creator><creatorcontrib>Hung, B F ; Wu, CH ; Chin, Albert ; Wang, S J ; Yen, F Y ; Hou, Y T ; Jin, Y ; Tao, HJ ; Chen, Shih C ; Liang, Mong-Song</creatorcontrib><description>A novel 1000 degC-stable Ir sub(x)Si gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in Ir sub(x)Si/HfSiON transistors. The 1000 degC thermal stability above pure metal (900 degC only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface</description><identifier>ISSN: 0018-9383</identifier><identifier>DOI: 10.1109/TED.2006.888626</identifier><language>eng</language><subject>Amorphous silicon ; Devices ; Equivalence ; Gates ; Hole mobility ; Pinning ; Semiconductor devices ; Work functions</subject><ispartof>IEEE transactions on electron devices, 2007-01, Vol.54 (2)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Hung, B F</creatorcontrib><creatorcontrib>Wu, CH</creatorcontrib><creatorcontrib>Chin, Albert</creatorcontrib><creatorcontrib>Wang, S J</creatorcontrib><creatorcontrib>Yen, F Y</creatorcontrib><creatorcontrib>Hou, Y T</creatorcontrib><creatorcontrib>Jin, Y</creatorcontrib><creatorcontrib>Tao, HJ</creatorcontrib><creatorcontrib>Chen, Shih C</creatorcontrib><creatorcontrib>Liang, Mong-Song</creatorcontrib><title>High-Temperature Stable Ir sub(x)Si Gates With High Work Function on HfSiON p-MOSFETs</title><title>IEEE transactions on electron devices</title><description>A novel 1000 degC-stable Ir sub(x)Si gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in Ir sub(x)Si/HfSiON transistors. The 1000 degC thermal stability above pure metal (900 degC only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface</description><subject>Amorphous silicon</subject><subject>Devices</subject><subject>Equivalence</subject><subject>Gates</subject><subject>Hole mobility</subject><subject>Pinning</subject><subject>Semiconductor devices</subject><subject>Work functions</subject><issn>0018-9383</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqNir1uwjAURj2AVAqdu96tZUhw4tQyc_kJQ5shqRiRQZfGNIlTX1vq4zdIPADSkT6dT4ex54THScKXi2q9ilPOZayUkqkcsQnniYqWQokH9kh0GVRmWTphX7n5rqMK2x6d9sEhlF4fG4SdAwrH1795aWCrPRLsja_hmsPeuh_YhO7kje1gID-XpviEPvooys26ohkbn3VD-HTbKXsZ7vc86p39DUj-0Bo6YdPoDm2gg1JcvikhMnF_-Q-i-UZz</recordid><startdate>20070101</startdate><enddate>20070101</enddate><creator>Hung, B F</creator><creator>Wu, CH</creator><creator>Chin, Albert</creator><creator>Wang, S J</creator><creator>Yen, F Y</creator><creator>Hou, Y T</creator><creator>Jin, Y</creator><creator>Tao, HJ</creator><creator>Chen, Shih C</creator><creator>Liang, Mong-Song</creator><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20070101</creationdate><title>High-Temperature Stable Ir sub(x)Si Gates With High Work Function on HfSiON p-MOSFETs</title><author>Hung, B F ; Wu, CH ; Chin, Albert ; Wang, S J ; Yen, F Y ; Hou, Y T ; Jin, Y ; Tao, HJ ; Chen, Shih C ; Liang, Mong-Song</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_8806583343</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Amorphous silicon</topic><topic>Devices</topic><topic>Equivalence</topic><topic>Gates</topic><topic>Hole mobility</topic><topic>Pinning</topic><topic>Semiconductor devices</topic><topic>Work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hung, B F</creatorcontrib><creatorcontrib>Wu, CH</creatorcontrib><creatorcontrib>Chin, Albert</creatorcontrib><creatorcontrib>Wang, S J</creatorcontrib><creatorcontrib>Yen, F Y</creatorcontrib><creatorcontrib>Hou, Y T</creatorcontrib><creatorcontrib>Jin, Y</creatorcontrib><creatorcontrib>Tao, HJ</creatorcontrib><creatorcontrib>Chen, Shih C</creatorcontrib><creatorcontrib>Liang, Mong-Song</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hung, B F</au><au>Wu, CH</au><au>Chin, Albert</au><au>Wang, S J</au><au>Yen, F Y</au><au>Hou, Y T</au><au>Jin, Y</au><au>Tao, HJ</au><au>Chen, Shih C</au><au>Liang, Mong-Song</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Temperature Stable Ir sub(x)Si Gates With High Work Function on HfSiON p-MOSFETs</atitle><jtitle>IEEE transactions on electron devices</jtitle><date>2007-01-01</date><risdate>2007</risdate><volume>54</volume><issue>2</issue><issn>0018-9383</issn><abstract>A novel 1000 degC-stable Ir sub(x)Si gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In addition, small threshold voltages and good hole mobilities are measured in Ir sub(x)Si/HfSiON transistors. The 1000 degC thermal stability above pure metal (900 degC only) is due to the inserted 5-nm amorphous Si, which also gives less Fermi-level pinning by the accumulated metallic full silicidation at the interface</abstract><doi>10.1109/TED.2006.888626</doi></addata></record>
fulltext fulltext
identifier ISSN: 0018-9383
ispartof IEEE transactions on electron devices, 2007-01, Vol.54 (2)
issn 0018-9383
language eng
recordid cdi_proquest_miscellaneous_880658334
source IEEE Xplore (Online service)
subjects Amorphous silicon
Devices
Equivalence
Gates
Hole mobility
Pinning
Semiconductor devices
Work functions
title High-Temperature Stable Ir sub(x)Si Gates With High Work Function on HfSiON p-MOSFETs
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T12%3A40%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High-Temperature%20Stable%20Ir%20sub(x)Si%20Gates%20With%20High%20Work%20Function%20on%20HfSiON%20p-MOSFETs&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Hung,%20B%20F&rft.date=2007-01-01&rft.volume=54&rft.issue=2&rft.issn=0018-9383&rft_id=info:doi/10.1109/TED.2006.888626&rft_dat=%3Cproquest%3E880658334%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-proquest_miscellaneous_8806583343%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=880658334&rft_id=info:pmid/&rfr_iscdi=true