0.7-2.7-GHz 12-W Power-Amplifier MMIC Developed Using MLP Technology

A design approach and test data for a broadband high-power amplifier monolithic microwave integrated circuit (MMIC) developed using MSAG MESFETs with multilevel-plating technology are presented. A low-loss matching design technique was used in the development of a two-stage amplifier. The UHF/L/S-ba...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2007-02, Vol.55 (2), p.222-229
Main Author: Bahl, I.J.
Format: Article
Language:English
Subjects:
Amplification
Amplifiers
Applied sciences
Broadband
Broadband amplifiers
Broadband power amplifiers
Circuit properties
Circuit testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Frequency ranges
High power amplifiers
high-power amplifiers (HPAs)
Integrated circuit technology
Integrated circuit testing
MESFET HPAs
MESFET integrated circuits
MESFETs
Microwave amplifiers
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave integrated circuits
Microwaves
MMICs
Monolithic integrated circuits
monolithic-microwave integrated-circuit (MMIC) HPAs
State of the art
two-octave HPAs
UHF
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Description
Summary:A design approach and test data for a broadband high-power amplifier monolithic microwave integrated circuit (MMIC) developed using MSAG MESFETs with multilevel-plating technology are presented. A low-loss matching design technique was used in the development of a two-stage amplifier. The UHF/L/S-band amplifier has exhibited greater than 12-W power output and better than 22% power-added efficiency over the 0.7-2.7-GHz frequency range. To our knowledge, these power results represent the state-of-the-art in multioctave high-power MMIC amplifiers
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2006.889151