Accuracy of Surface-Potential-Based Long-Wide-Channel Thick-Base MOS Transistor Models

This paper answers the frequently asked question, ldquoHow accurate are the approximate long-wide-channel thick-base MOS transistor baseline models that have been used to develop the compact models for computer-aided circuit designs?rdquo Three commonly used surface-potential-based( U s = qPsis / kT...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2007-08, Vol.54 (8), p.1897-1909
Main Authors: Jie, B.B., Chih-Tang Sah
Format: Article
Language:English
Subjects:
Accuracy
Analytical models
Applied sciences
Approximation
Approximation methods
Baseline model
bulk-charge approximation
Computational modeling
Deviation
Electric potential
Electronics
Equations
Exact sciences and technology
four-component space-charge theory
Integrated circuit modeling
Mathematical model
Mathematical models
Metal oxide semiconductors
MOSFET
MOST
self-consistent remote charge boundary condition
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Studies
surface potential model
Threshold voltage
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper answers the frequently asked question, ldquoHow accurate are the approximate long-wide-channel thick-base MOS transistor baseline models that have been used to develop the compact models for computer-aided circuit designs?rdquo Three commonly used surface-potential-based( U s = qPsis / kT ) approximations of the ionized impurity bulk charge are evaluated as follows: Q B alpha (i) ( Us ) 1/2 ; (ii) ( Us -1) 1/2 ; (iii)[ Us -1 + exp(- U s )] 1/2 . The double-integral baseline model for comparison includes the self-consistent remote charge-neutrality boundary condition, minority carriers, and space-constant impurity-concentration and oxide thickness. Percentage deviations of the approximations from the baseline model are computed for the dc drain current. Approximation (i) show a significant deviation, which is ~ 16% at threshold voltage, diverging rapidly in the subthreshold range toward flatband. Approximations (ii) and (iii) show a few percent (1% to 2%) deviations in both inversion and subthreshold ranges but diverge widely below subthreshold and in accummulation. A new analytical model is tested and shows better than 10% accuracy below subthreshold and in accummulation.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.900674