Systematic Study of the Effects of Modulation p-Doping on 1.3-μm Quantum-Dot Lasers

The effects of modulation p-doping on 1.3-mum InGaAs-InAs quantum-dot (QD) lasers are systematically investigated using a series of wafers with doping levels from 0 to 18 acceptors per QD. Various characterization techniques for both laser diodes and surface-emitting light-emitting diode structures...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2007-11, Vol.43 (11-12), p.1129-1139
Main Authors: ALEXANDER, Ryan R, CHILDS, David T. D, ARAKAWA, Yasuhiko, BADCOCK, Tom J, ROYCE, Richard J, MOWBRAY, David J, AGARWAL, Harsh, GROOM, Kristian M, LIU, Hui-Yun, HOPKINSON, Mark, HOGG, Richard A, ISHIDA, Mitsuru, YAMAMOTO, Tsuyoshi, SUGAWARA, Mitsuru
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gain
Laser diodes
Lasers
Light-emitting diodes
Modulation
Optics
Optoelectronic devices
Physics
Quantum dots
Quantum electronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
laser diodes
Temperature dependence
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Summary:The effects of modulation p-doping on 1.3-mum InGaAs-InAs quantum-dot (QD) lasers are systematically investigated using a series of wafers with doping levels from 0 to 18 acceptors per QD. Various characterization techniques for both laser diodes and surface-emitting light-emitting diode structures are employed. We report: 1) how the level of modulation p-doping alters the length dependant laser characteristics (in turn providing insight on various key parameters); 2) the effect of modulation p-doping on the temperature dependence of a number of factors and its role in obtaining an infinite T sub(0); 3) how increasing concentrations of modulation p-doping affects the saturated gain, differential gain, and gain profile of the lasers; and finally, 4) the effect modulation p-doping has on the small signal modulation properties of 1.3-mum QD lasers. In each of these areas, the role of modulation p-doping is established and critically discussed.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2007.907213