SiGeC/Si Electrooptic Modulators

The addition of carbon to silicon-germanium alloys provides the ability to lattice match thick layers with high germanium composition to silicon substrates. Thick strain-free silicon-germanium-carbon (SiGeC) layers on silicon allow the design of optical waveguides that have large optical mode overla...

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Bibliographic Details
Published in:Journal of lightwave technology 2007-03, Vol.25 (3), p.866-874
Main Authors: Schubert, M.F., Rana, F.
Format: Article
Language:English
Subjects:
Alloys
Applied sciences
Broadband
Carbon
Carrier confinement
Carriers
Circuit properties
Concentration (composition)
Device modeling
Electric, optical and optoelectronic circuits
Electron optics
Electronics
Electrooptic modulators
Electrooptics
Exact sciences and technology
Germanium alloys
Germanium silicon alloys
integrated optics
Integrated optics. Optical fibers and wave guides
Integrated optoelectronics. Optoelectronic circuits
Modulators
Optical and optoelectronic circuits
Optical modulation
optical modulator
Optical refraction
Optical variables control
Optical waveguides
Optoelectronic devices
plasma dispersion effect
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Silicon germanium
silicon optoelectronics
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Description
Summary:The addition of carbon to silicon-germanium alloys provides the ability to lattice match thick layers with high germanium composition to silicon substrates. Thick strain-free silicon-germanium-carbon (SiGeC) layers on silicon allow the design of optical waveguides that have large optical mode overlap with the waveguide core. In addition, SiGeC/Si heterostructures enable strong confinement of large electron and hole concentrations. The combination of tightly confined carriers and photons can be used to realize high-performance broadband electrooptic modulators based on carrier density-induced refractive index changes. We show that modulators with lengths around 30 mum and turn-on times below 0.2 ns are possible with optimized designs
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2006.890432