Planarized and Nanopatterned Mesoporous Silica Thin Films by Chemical-Mechanical Polishing of Gap-Filled Topographically Patterned Substrates

Nanopatterning of mesoporous silica thin films is achieved by a simple chemical-mechanical polishing (CMP) process. Mesoporous silica thin films are deposited onto topographically patterned (rectangular cross-section channels) silicon substrates so that good gap fill is achieved within the topograph...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2011-05, Vol.10 (3), p.451-461
Main Authors: Arnold, D C, Blake, A, Quinn, J, Iacopino, D, Tobin, J M, O'Mahony, Colm, Holmes, J D, Morris, M A
Format: Article
Language:English
Subjects:
Applied sciences
Channels
Chemical processes
Chemical-mechanical polishing
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Gap fill
Materials science
mesoporous
Mesoporous materials
Microelectronic fabrication (materials and surfaces technology)
Nanocomposites
Nanomaterials
Nanopatterning
Nanostructure
Order disorder
Physics
Planarization
Porous materials
granular materials
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor thin films
Silicon compounds
Silicon dioxide
Specific materials
Sputtering
Substrates
Surfaces
Thin films
Transistors
ultralow-dielectric-constant materials
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Summary:Nanopatterning of mesoporous silica thin films is achieved by a simple chemical-mechanical polishing (CMP) process. Mesoporous silica thin films are deposited onto topographically patterned (rectangular cross-section channels) silicon substrates so that good gap fill is achieved within the topography. The straight-etched channels promote the ordering of the mesopores along the length of the channel. CMP can then be used to successfully remove excess film above the channels from the mesas, to leave only the material within the channels, without disrupting pore order. These results indicate the robustness of these mesoporous materials to damage during the CMP process making the prospect of integrating these materials into advanced circuitry a possibility.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2010.2046909