Compact Semiconductor Tapers for Deep-to-Shallow Etch Transitions

Double-etched taper devices for application as mode converters between shallow and deep-etched waveguides are presented with particular attention paid to the derivation of the taper profile. Finite-difference time-domain simulations of the devices are carried out and compared with fabricated devices...

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Bibliographic Details
Published in:IEEE photonics technology letters 2007-10, Vol.19 (19), p.1544-1546
Main Authors: Strain, M.J., Sorel, M.
Format: Article
Language:English
Subjects:
Capacitive sensors
Deeply etched
Derivation
Devices
Etching
Finite difference method
Finite difference methods
integrated optics
low loss
Mathematical analysis
mode converter
Noise levels
Optical losses
Optical waveguides
Reflectivity
Refractive index
Semiconductors
Spectra
tapers
Time domain analysis
Waveguide components
Waveguide transitions
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Summary:Double-etched taper devices for application as mode converters between shallow and deep-etched waveguides are presented with particular attention paid to the derivation of the taper profile. Finite-difference time-domain simulations of the devices are carried out and compared with fabricated devices along with a transfer matrix method representation that confirms the extraction of values for reflectivity from the transmission spectra of the devices. Tapers of sub-100-mum lengths are shown to exhibit losses of
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2007.903886