Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates

We report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth inter...

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Bibliographic Details
Published in:Nanotechnology 2011-02, Vol.22 (6), p.065302-065302
Main Authors: Skiba-Szymanska, Joanna, Jamil, Ayesha, Farrer, Ian, Ward, Martin B, Nicoll, Christine A, Ellis, David J P, Griffiths, Jonathan P, Anderson, David, Jones, Geb A C, Ritchie, David A, Shields, Andrew J
Format: Article
Language:English
Subjects:
Emission
Excitation
Fine structure
Fluctuation
Indium arsenides
Molecular beam epitaxy
Quantum dots
Wavelengths
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Summary:We report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth interface allows us to measure single dot emission linewidths of 80 µeV under non-resonant optical excitation, similar to that observed for self-assembled QDs. The dots reveal excitonic transitions confirmed by power dependence and fine structure splitting measurements. The emission wavelengths are stable, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of the re-growth interface.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/22/6/065302