The Optimized Geometry of the SiGe HBT Power Cell for 802.11a WLAN Applications

A novel SiGe heterojunction bipolar transistor power cell for wireless LAN IEEE 802.11a power amplifier (PA) applications is proposed. The subcells with different emitter stripe widths have been compared. Besides, the layout of a novel power cell is designed and optimized to alleviate nonideal effec...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2007-01, Vol.17 (1), p.49-51
Main Authors: Lin, C.-H., Yan-Kuin Su, Juang, Y.-Z., Chin-Fong Chiu, Shoou-Jinn Chang, Chen, J.F., Chih-Ho Tu
Format: Article
Language:English
Subjects:
Amplifiers
Applied sciences
Circuit properties
Design optimization
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Emittance
Exact sciences and technology
Geometry
Germanium silicon alloys
Heterojunction bipolar transistors
Local area networks
Microwaves
Performance gain
Power amplifier (PA)
Power amplifiers
Radio frequency
Radiofrequency amplifiers
Semiconductor devices
SiGe heterojunction bipolar transistor (HBT)
Silicon germanides
Silicon germanium
Wireless communication
Wireless LAN
WLAN
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Summary:A novel SiGe heterojunction bipolar transistor power cell for wireless LAN IEEE 802.11a power amplifier (PA) applications is proposed. The subcells with different emitter stripe widths have been compared. Besides, the layout of a novel power cell is designed and optimized to alleviate nonideal effects for better performance. Compared with the performance of power cells, it is demonstrated that this novel power cell is superior to other power cells for the design of the PA
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2006.887257