"Spiked" GaInP Quantum Wells for Shorter Red Wavelength Emission

Compositional and strain limitations are often restricting the emission wavelength from quantum-well (QW) lasers. The letter presents simulation and experimental results on the effects of including thin higher bandgap layers into GalnP QWs emitting in the short red wavelength range. These were consi...

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Bibliographic Details
Published in:IEEE photonics technology letters 2007-11, Vol.19 (22), p.1819-1821
Main Authors: Dumitrescu, M., Toikkanen, L., Laakso, A., Tukiainen, A., Rimpilainen, V., Pessa, M.
Format: Article
Language:English
Subjects:
Capacitive sensors
Degradation
Emission
Energy states
GaInP-AlGaInP semiconductor lasers
Lasers
Multilevel systems
Optical materials
perturbed quantum wells (QWs)
Photonic band gap
Power engineering and energy
Quantum well lasers
Quantum wells
Semiconductor lasers
short red wavelength range
Simulation
Thin films
Wavefunctions
Wavelength measurement
Wavelengths
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Summary:Compositional and strain limitations are often restricting the emission wavelength from quantum-well (QW) lasers. The letter presents simulation and experimental results on the effects of including thin higher bandgap layers into GalnP QWs emitting in the short red wavelength range. These were considered "spiked" single QWs since the thin higher bandgap layers used in our studies varied in composition and led to carrier wavefunctions that are like perturbed single QW wavefunctions rather than wavefunctions of coupled QWs. The edge-emitting lasers having up to four-monolayer AlGalnP "spikes" in the QWs had an emission blueshift of up to 25 nm, whereas the degradation of other laser characteristics was in line with the degradation observed when similar emission blueshift was generated by conventional QW modification.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2007.906845