Ambipolar Oxide Thin-Film Transistor

The first ambipolar oxide‐based thin‐film transistor (TFT) using an SnO channel is presented, demonstrating operation of a complementary‐like inverter configured by two ambipolar SnO TFTs. Saturation mobilities of 0.8 and 5 × 10−4 cm2 V−1s−1 are obtained for the p‐channel and n‐channel modes, respec...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2011-08, Vol.23 (30), p.3431-3434
Main Authors: Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo
Format: Article
Language:English
Subjects:
ambipolar thin film transistors
complementary-like inverters
Oxide semiconductors
Oxides - chemistry
Silicon Dioxide - chemistry
Temperature
Tin Compounds - chemistry
tin monoxide
Transistors, Electronic
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Summary:The first ambipolar oxide‐based thin‐film transistor (TFT) using an SnO channel is presented, demonstrating operation of a complementary‐like inverter configured by two ambipolar SnO TFTs. Saturation mobilities of 0.8 and 5 × 10−4 cm2 V−1s−1 are obtained for the p‐channel and n‐channel modes, respectively, and the inverter shows a maximum voltage gain of 2.5. This is the first demonstration of a complementary‐like circuit using a single oxide semiconductor channel and provides an important step toward practical oxide electronics.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201101410