Early stage of ripple formation on Ge(001) surfaces under near-normal ion beam sputtering

We present a study of the early stage of ripple formation on Ge(001) surfaces irradiated by a 1 keV Xe(+) ion beam at room temperature and near-normal incidence. A combination of a grazing incidence x-ray scattering technique and atomic force microscopy allowed us to observe a variation of the symme...

Full description

Saved in:
Bibliographic Details
Published in:Nanotechnology 2008-01, Vol.19 (3), p.035304-035304 (5)
Main Authors: Carbone, D, Alija, A, Plantevin, O, Gago, R, Facsko, S, Metzger, T H
Format: Article
Language:English
Subjects:
Condensed Matter
Materials Science
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present a study of the early stage of ripple formation on Ge(001) surfaces irradiated by a 1 keV Xe(+) ion beam at room temperature and near-normal incidence. A combination of a grazing incidence x-ray scattering technique and atomic force microscopy allowed us to observe a variation of the symmetry of the surface nanopattern upon increase of the ion fluence. The isotropic dot pattern formed during the first minutes of sputtering evolves into an anisotropic ripple pattern for longer sputtering time. These results provide a new basis for further steps in the theoretical description of the morphology evolution during ion beam sputtering.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/19/03/035304