Stable field emission performance of SiC-nanowire-based cathodes

In this paper we report the fabrication and testing of diode-type low-voltage field emission display (FED) devices with SiC-nanowire-based cathodes. The SiC-nanowire FEDs (flat vacuum lamps) were characterized by low emission threshold fields (∼2 V µm(-1)), high current density and stable long-term...

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Bibliographic Details
Published in:Nanotechnology 2008-06, Vol.19 (22), p.225706-225706 (4)
Main Authors: Kim, Dong-Wan, Choi, Young-Jin, Choi, Kyoung Jin, Park, Jae-Gwan, Park, Jae-Hwan, Pimenov, Sergei M, Frolov, Vadim D, Abanshin, Nikolay P, Gorfinkel, Boris I, Rossukanyi, Nikolay M, Rukovishnikov, Alexander I
Format: Article
Language:English
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Summary:In this paper we report the fabrication and testing of diode-type low-voltage field emission display (FED) devices with SiC-nanowire-based cathodes. The SiC-nanowire FEDs (flat vacuum lamps) were characterized by low emission threshold fields (∼2 V µm(-1)), high current density and stable long-term performance. The analysis of field emission data evidenced that the Schottky effect would have a considerable influence on the field emission from nanowire-based samples, leading to the true values of the field enhancement factor being significantly lower than those derived from Fowler-Nordheim plots.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/19/22/225706