High resolution surface morphology measurements using EBSD cross-correlation techniques and AFM

The surface morphology surrounding wedge indentations in (001) Si has been measured using electron backscattered diffraction (EBSD) and atomic force microscopy (AFM). EBSD measurement of the lattice displacement field relative to a strain-free reference location allowed the surface uplift to be meas...

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Bibliographic Details
Published in:Ultramicroscopy 2011-07, Vol.111 (8), p.1206-1213
Main Authors: Vaudin, M.D., Stan, G., Gerbig, Y.B., Cook, R.F.
Format: Article
Language:English
Subjects:
AFM
Atomic force microscopy
Contact
Cross-correlation
Displacements (lattice)
EBSD
Electron back scatter diffraction
Indentation
Lattices
Morphology
Wedges
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Summary:The surface morphology surrounding wedge indentations in (001) Si has been measured using electron backscattered diffraction (EBSD) and atomic force microscopy (AFM). EBSD measurement of the lattice displacement field relative to a strain-free reference location allowed the surface uplift to be measured by summation of lattice rotations about the indentation axis. AFM was used in intermittent contact mode to determine surface morphology. The height profiles across the indentations for the two techniques agreed within 1nm. Elastic uplift theory is used to model the data. ► Test sample was wedge indentation in single-crystal silicon. ► EBSD cross-correlation techniques used to measure surface orientation across indentation. ► Surface morphology/uplift was calculated from surface orientation profile. ► Characterized surface morphology with AFM; good agreement with EBSD obtained. ► Modeled uplift as dilatation below indentation gave good agreement with experiment.
ISSN:0304-3991
1879-2723
DOI:10.1016/j.ultramic.2011.01.039