n-InAs Nanopyramids Fully Integrated into Silicon

• Published in: Nano letters 2011-07, Vol.11 (7), p.2814-2818
• Main Authors: Prucnal, Slawomir, Facsko, Stefan, Baumgart, Christine, Schmidt, Heidemarie, Liedke, Maciej Oskar, Rebohle, Lars, Shalimov, Artem, Reuther, Helfried, Kanjilal, Aloke, Mücklich, Arndt, Helm, Manfred, Zuk, Jerzy, Skorupa, Wolfgang
• Format: Article
• Language: English
• Subjects: Applied sciences; Arsenicals - chemistry; Cross-disciplinary physics: materials science; rheology; Diodes; Electron mobility; Electronic devices; Electronics; Exact sciences and technology; Heterojunctions; Indium - chemistry; Indium arsenides; Materials; Materials science; Methods of nanofabrication; Microscopy; Molecular electronics, nanoelectronics; Nanostructure; Nanostructures - chemistry; Nanotechnology; Particle Size; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Silicon - chemistry; Silicon Dioxide - chemistry; Surface Properties
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl201178d

InAs with an extremely high electron mobility (up to 40 000 cm2/V s) seems to be the most suitable candidate for better electronic devices performance. Here we present a synthesis of inverted crystalline InAs nanopyramids (NPs) in silicon using a combined hot ion implantation and millisecond flash lamp annealing techniques. Conventional selective etching was used to form the InAs/Si heterojunction. The current–voltage measurement confirms the heterojunction diode formation with the ideality factor of η = 4.6. Kelvin probe force microscopy measurements indicate a type-II band alignment of n-type InAs NPs on p-type silicon. The main advantage of our method is its integration with large-scale silicon technology, which also allows applying it for Si-based electronic devices.