Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory

A TiO2/VO2 oxide double‐layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2011-09, Vol.23 (35), p.4063-4067
Main Authors: Chang, Seo Hyoung, Lee, Shin Buhm, Jeon, Dae Young, Park, So Jung, Kim, Gyu Tae, Yang, Sang Mo, Chae, Seung Chul, Yoo, Hyang Keun, Kang, Bo Soo, Lee, Myoung-Jae, Noh, Tae Won
Format: Article
Language:English
Subjects:
crossbar architecture
nanodevices
Nanostructures - chemistry
Oxides - chemistry
resistance switching
Semiconductors
sneak path problem
Titanium - chemistry
titanium dioxide
Vanadium Compounds - chemistry
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Summary:A TiO2/VO2 oxide double‐layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO2 and VO2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201102395