Investigation of programming charge distribution in nonoverlapped implantation nMOSFETs

• Published in: IEEE transactions on electron devices 2006-10, Vol.53 (10), p.2517-2524
• Main Authors: Jeng, E.S., Pai-Chun Kuo, Chien-Sheng Hsieh, Chen-Chia Fan, Kun-Ming Lin, Hui-Chun Hsu, Wu-Ching Chou
• Format: Article
• Language: English
• Subjects: Applied sciences; Bars; Channel hot electron injection (CHEI); Charge; Charge carrier density; Charge carrier lifetime; Charge distribution; charge-pumping; Density; Design. Technologies. Operation analysis. Testing; Devices; Drains; Electronics; Exact sciences and technology; Integrated circuits; Integrated circuits by function (including memories and processors); Ion implantation; Magnetic and optical mass memories; MOSFETs; nonoverlapped implantation (NOI); nonvolatile memory (NVM); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor memories; Simulators; Storage and reproduction of information; Transistors; Trapping
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2006.882044

Novel gate-to-drain nonoverlapped-implantation (NOI) nMOSFETs have been developed as potential multibit-per-cell nonvolatile-memory (NVM) devices. The lateral charge distribution of the NOI NVM device programmed by channel hot electron injection is investigated by charge-pumping (CP) techniques with presumed interface trap distributions. For the first time, the CP results have revealed the lateral charge distribution and trapping density at the NOI's programmed state. The maximum trapping charge density locates near its drain junction. The charge distribution is estimated about 90 nm in length and spread widely over the NOI region. Two-dimensional simulators with charge bars using the same charge trapping distribution confirm the experimental results by fitting their I DS -V G curves