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High-Efficiency LDMOS Power-Amplifier Design at 1 GHz Using an Optimized Transistor Model
A 10-W LDMOS harmonically tuned power amplifier at 1 GHz with state-of-the-art power-added efficiency of 80% is presented. The fundamental and second-harmonic load impedances are optimized for maximum efficiency while other harmonics are blocked by a low-pass load network. A simplified model of the...
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| Published in: | IEEE transactions on microwave theory and techniques 2009-07, Vol.57 (7), p.1647-1654 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c575t-3483ef84169d274ff1e3cc03f79ef9906112b0d7a40f2348a21a624de6550b953 |
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| cites | cdi_FETCH-LOGICAL-c575t-3483ef84169d274ff1e3cc03f79ef9906112b0d7a40f2348a21a624de6550b953 |
| container_end_page | 1654 |
| container_issue | 7 |
| container_start_page | 1647 |
| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 57 |
| creator | Nemati, H.M. Fager, C. Thorsell, M. Zirath, H. |
| description | A 10-W LDMOS harmonically tuned power amplifier at 1 GHz with state-of-the-art power-added efficiency of 80% is presented. The fundamental and second-harmonic load impedances are optimized for maximum efficiency while other harmonics are blocked by a low-pass load network. A simplified model of the transistor specialized for harmonically tuned and switched mode operations is proposed and used for the design. Good agreement between simulations and measurements is observed, indicating high accuracy of the model and design approach for these particular applications. |
| doi_str_mv | 10.1109/TMTT.2009.2022590 |
| format | article |
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The fundamental and second-harmonic load impedances are optimized for maximum efficiency while other harmonics are blocked by a low-pass load network. A simplified model of the transistor specialized for harmonically tuned and switched mode operations is proposed and used for the design. Good agreement between simulations and measurements is observed, indicating high accuracy of the model and design approach for these particular applications.</description><identifier>ISSN: 0018-9480</identifier><identifier>ISSN: 1557-9670</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2009.2022590</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Accuracy ; Amplifiers ; Applied sciences ; Blocking ; Capacitance ; Circuit properties ; Computer simulation ; Design optimization ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronic equipment and fabrication. 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The fundamental and second-harmonic load impedances are optimized for maximum efficiency while other harmonics are blocked by a low-pass load network. A simplified model of the transistor specialized for harmonically tuned and switched mode operations is proposed and used for the design. Good agreement between simulations and measurements is observed, indicating high accuracy of the model and design approach for these particular applications.</description><subject>Accuracy</subject><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Blocking</subject><subject>Capacitance</subject><subject>Circuit properties</subject><subject>Computer simulation</subject><subject>Design optimization</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>Gallium nitride</subject><subject>Harmonically tuned</subject><subject>High power amplifiers</subject><subject>Impedance</subject><subject>LDMOS</subject><subject>Microwave technology</subject><subject>Microwaves</subject><subject>Power amplifier</subject><subject>power amplifier (PA)</subject><subject>Power amplifiers</subject><subject>Semiconductor devices</subject><subject>State of the art</subject><subject>Switched mode</subject><subject>Switches</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0018-9480</issn><issn>1557-9670</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kU1rGzEQhpfSQt20P6D0IgptT5vqe6VjSNK4YONCNoeehKwd2Qr7VWlNSH59tdj40EMvGoSeecXMUxQfCb4kBOvv9bquLynGOh-UCo1fFQsiRFVqWeHXxQJjokrNFX5bvEvpMV-5wGpR_F6G3b689T64AL17Rqub9eYe_RqeIJZX3dgGHyCiG0hh1yM7IYLuli_oIYV-h2yPNuMUuvACDaqj7VNI0xDRemigfV-88bZN8OFUL4qHH7f19bJcbe5-Xl-tSicqMZWMKwZecSJ1QyvuPQHmHGa-0uC1xpIQusVNZTn2NMOWEispb0AKgbdasIvi_pibnmA8bM0YQ2fjsxlsMBES2Oj2xu1t20FMJoGRVFPFeWWc1txwaxtjOWOGKiZB40Yz4nPqt2PqGIc_B0iT6UJy0La2h-GQjFKaKaLY_P_X_5JMMoGJVhn8_A_4OBxin3djlJA6C6nmNHKEXBxSiuDP8xBsZtNmNm1m0-ZkOvd8OQXb5GzrswgX0rmRkopTzGfu05ELAHB-FlhKnaf5C1xiriI</recordid><startdate>20090701</startdate><enddate>20090701</enddate><creator>Nemati, H.M.</creator><creator>Fager, C.</creator><creator>Thorsell, M.</creator><creator>Zirath, H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| ispartof | IEEE transactions on microwave theory and techniques, 2009-07, Vol.57 (7), p.1647-1654 |
| issn | 0018-9480 1557-9670 1557-9670 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Journals |
| subjects | Accuracy Amplifiers Applied sciences Blocking Capacitance Circuit properties Computer simulation Design optimization Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Frequency Gallium nitride Harmonically tuned High power amplifiers Impedance LDMOS Microwave technology Microwaves Power amplifier power amplifier (PA) Power amplifiers Semiconductor devices State of the art Switched mode Switches Transistors Voltage |
| title | High-Efficiency LDMOS Power-Amplifier Design at 1 GHz Using an Optimized Transistor Model |
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