Fabrication and characterization of an individual ZnO microwire-based UV photodetector

• Published in: Solid state sciences 2011-05, Vol.13 (5), p.1205-1210
• Main Authors: Chai, G.Y., Chow, L., Lupan, O., Rusu, E., Stratan, G.I., Heinrich, H., Ursaki, V.V., Tiginyanu, I.M.
• Format: Article
• Language: English
• Subjects: Aluminum oxide; Applied sciences; Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Monitoring; Optoelectronic devices; Photodetector; Photodetectors; Physics; radiation; Relative humidity; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon substrates; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Ultraviolet UV; Zinc oxide; ZnO microwire
• ISSN: 1293-2558; 1873-3085
• DOI: 10.1016/j.solidstatesciences.2011.01.010

In this paper, a single ZnO microwire-based photodetector for the monitoring of ultraviolet (UV) radiation is described. Single crystal ZnO microwires were synthesized using a chemical vapor deposition (CVD) on the Si or Al 2O 3 substrate. The UV photodetector was fabricated by using in-situ lift-out method in a focused ion beam system to manipulate individual zinc oxide microwire. The photodetector prototype consists of a single ZnO microwire (20 μm in length) and exhibits a response of ∼10 mA/W for UV light (365 nm) under 1 V bias. The transient response measurements revealed relatively fast response. The effect of oxygen adsorption and of different relative humidity conditions on the electronic transport through individual microwire is explored and discussed. [Display omitted]