Displacive processes in systems with bcc parent lattice

The changes of sample shape are caused by plastic deformation or by martensitic phase transformations. In both cases the mechanisms of atomic rearrangements are based on collective displacements of atomic aggregates. The internal structure of dislocations, carriers of plastic deformation, can be exa...

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Bibliographic Details
Published in:Progress in materials science 2011-08, Vol.56 (6), p.841-851
Main Author: Paidar, V.
Format: Article
Language:English
Subjects:
BCC metals
Dislocations
Displacements (lattice)
Lattices
Phase transformations
Planes
Plastic deformation
Stacking faults
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Summary:The changes of sample shape are caused by plastic deformation or by martensitic phase transformations. In both cases the mechanisms of atomic rearrangements are based on collective displacements of atomic aggregates. The internal structure of dislocations, carriers of plastic deformation, can be examined using the energies of generalized stacking faults displayed by so called I3-surfaces calculated for bcc metals by Vasek Vitek already more than 40 years ago. This approach can be extended to the shuffling of atomic planes that plays a crucial role in martensitic phase transformations. Similarities and differences between displacive processes of lattice shearing and atomic plane alternate shuffling are discussed.
ISSN:0079-6425
DOI:10.1016/j.pmatsci.2011.01.009