Pb(Zr,Ti)O sub( 3) (PZT) Thin Film Sensors for Fully-Integrated, Passive Telemetric Transponders

• Published in: Sensors & transducers 2011-04, Vol.11 (Special Issue), p.34-34
• Main Authors: Fu, Richard X, Toonen, Ryan C, Ngo, Eric H, Cole, Melanie W, Hirsch, Samuel G, Ivill, Mathew P, Hubbard, Clifford W
• Format: Article
• Language: English
• Subjects: Deposition; Electric potential; Lead (metal); Lead zirconate titanates; Sapphire; Silicon substrates; Sputtered films; Thin films
• ISSN: 1726-5479; 1726-5479

The great potential of taking advantages of PZT in a single chip to achieve inexpensive, fully-integrated, passive telemetric transponders has been shown in this paper. The processes for the sputter deposition of Pb(Zr,Ti)O sub( 3) (PZT) thin films from two different composite targets on both Si and c-plane sapphire substrates have been demonstrated. PZT thin films have been deposited by sputter technique. PZT films were deposited onto substrates (Si [(100) Cz wafer] and c-plane sapphire (0001)//Ti//Pt) followed by sputter-deposited Pt top electrodes. X-ray diffraction results showed that both sputtered PZT films were textured along the [110] direction. The degree of preference for the [110] direction was greater on sapphire substrate where the intensity of that peak is seen to be larger compared to the intensity one Si substrate. TEM data revealed that both sputtered PZT films were polycrystalline in nature. Selected area diffraction (SAD) pattern showed that the degree of disorientation between the crystallites was smaller on sapphire substrate compared to on Si substrate, which confirmed the results from the XRD. The remnant polarization P sub( r) on sapphire substrate was larger than on Si's. The leakage current for the 11 % Pb target sputtered film was much less than 22 % Pb target sputtered film. The breakdown voltage on sapphire substrate was the best. However, for the 11 % Pb target sputtered film's breakdown voltage was much higher than 22% Pb target sputtered film.