The sensitivity of radiation-induced leakage to STI topology and sidewall doping

The sensitivity of radiation-induced source–drain leakage to the amount of recess in the shallow-trench isolation (STI) of CMOS technologies is reported. The impact of the doping profile along the STI sidewall on the magnitude of the leakage current is quantified. The sensitivity of the radiation-in...

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Bibliographic Details
Published in:Microelectronics and reliability 2011-05, Vol.51 (5), p.889-894
Main Authors: Rezzak, Nadia, Alles, Michael L., Schrimpf, Ronald D., Kalemeris, Sarah, Massengill, Lloyd W., Sochacki, John, Barnaby, Hugh J.
Format: Article
Language:English
Subjects:
Applied sciences
CMOS
Design. Technologies. Operation analysis. Testing
Doping
Electronics
Exact sciences and technology
Integrated circuits
Leakage
Leakage current
Microelectronics
Recesses
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Topology
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Summary:The sensitivity of radiation-induced source–drain leakage to the amount of recess in the shallow-trench isolation (STI) of CMOS technologies is reported. The impact of the doping profile along the STI sidewall on the magnitude of the leakage current is quantified. The sensitivity of the radiation-induced leakage current to these parameters provides insight into how process variability is manifested as variations in the radiation response.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2010.12.013