A mathematical model to characterise effects of liquid hold-up on bosh silicon transport in the dripping zone of a blast furnace

A first principle based mathematical model has been developed to characterise the effect of total liquid hold-up on the bosh silicon distribution behaviour in the dripping zone of a blast furnace. Two specific cases of hold-up behaviour have been investigated, namely, hold-up in the absence and in t...

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Bibliographic Details
Published in:Applied mathematical modelling 2011-09, Vol.35 (9), p.4208-4221
Main Authors: Das, S.K., Kumari, Amrita, Bandopadhay, D., Akbar, S.A., Mondal, G.K.
Format: Article
Language:English
Subjects:
Applied sciences
Blast furnace
Bosh silicon
Chemistry
Conservation equations
Devices using thermal energy
Dripping zone
Electrochemistry
Energy
Energy. Thermal use of fuels
Exact sciences and technology
Furnaces
General and physical chemistry
Kinetics and mechanism of reactions
Liquid hold-up
Mathematical model
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Summary:A first principle based mathematical model has been developed to characterise the effect of total liquid hold-up on the bosh silicon distribution behaviour in the dripping zone of a blast furnace. Two specific cases of hold-up behaviour have been investigated, namely, hold-up in the absence and in the presence of counter current gas flow conditions. The model exemplifies coupled phenomenon of chemical kinetics, transport processes and liquid hold-up to characterise the silicon behaviour in the dripping zone. The present modelling investigation shows that the bosh silicon level diminishes with the enhanced liquid hold-up in the dripping zone. Further, the influence of counter current gas flow on the hold-up is not significant. However, it has been observed that the liquid phase temperature reduces with increased liquid hold-up in dripping zone under steady state operating conditions. The model predictions of bosh silicon distribution have been validated with the published literatures (bulk values) and found to be in good agreement.
ISSN:0307-904X
DOI:10.1016/j.apm.2011.02.045