High rate performance of virus enabled 3D n-type Si anodes for lithium-ion batteries

• Published in: Electrochimica acta 2011-05, Vol.56 (14), p.5210-5213
• Main Authors: Chen, Xilin, Gerasopoulos, Konstantinos, Guo, Juchen, Brown, Adam, Ghodssi, Reza, Culver, James N., Wang, Chunsheng
• Format: Article
• Language: English
• Subjects: 3D structure; Accumulators; Anodes; Applied sciences; Collectors; Direct energy conversion and energy accumulation; Electrical conductivity; Electrical engineering. Electrical power engineering; Electrical power engineering; Electrochemical conversion: primary and secondary batteries, fuel cells; Electrochemical impedance spectroscopy; Exact sciences and technology; Lithium-ion batteries; Lithium-ion battery; N-type Si; Nickel; Rate performance; Silicon; Three dimensional; Tobacco mosaic virus
• ISSN: 0013-4686; 1873-3859
• DOI: 10.1016/j.electacta.2011.03.037

► A novel three-dimensional Tobacco mosaic virus (TMV) assembled n-type silicon anode is reported for the first time. ► The combination of the large surface area conferred by the virus-enabled 3D Ni/TMV1cys current collector with the high electric conductivity of n-type Si rods results in excellent cyclic stability and rate capability for the core-shell n-type Si/Ni/TMV1cys anodes. ► Electrochemical impedance spectroscopy reveals that the high electronic conductivity of n-type Si significantly reduces charge transfer resistance, thus even at high C-rates the capacity of the n-type Si is increased to almost 1000mAh/g compared to undoped Si. A patterned 3D Si anode is fabricated by physical vapor deposition of n-type Si on a self-assembled TMV1cys-structured nickel current collector. The combination of the large surface area conferred by the virus-enabled 3D Ni/TMV1cys current collector with the high electric conductivity of n-type Si rods results in excellent cyclic stability and rate capability for the core-shell n-type Si/Ni/TMV1cys anodes. Electrochemical impedance spectroscopy reveals that the high electronic conductivity of n-type Si significantly reduces charge transfer resistance, thus even at high current densities the capacity of the n-type Si is increased to almost 630mAh/g compared to undoped Si.