A C-band high-efficiency second-harmonic-tuned hybrid power amplifier in GaN technology

In this paper, the design, fabrication, and test of high-efficiency, high-power C-band harmonic-tuned power amplifiers in GaN technology is reported. The amplifier has been designed utilizing second-harmonic tuning for high-efficiency operation, thus exploiting the high-breakdown voltage peculiarity...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2006-06, Vol.54 (6), p.2713-2722
Main Authors: Colantonio, P., Giannini, F., Giofre, R., Limiti, E., Serino, A., Peroni, M., Romanini, P., Proietti, C.
Format: Article
Language:English
Subjects:
Amplifiers
Applied sciences
Bandwidth
Circuit properties
Drains
Electric potential
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Fabrication
Frequency
Gallium nitride
Gallium nitrides
Harmonic manipulations
high efficiency
High power amplifiers
low intermodulation
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwaves
Operational amplifiers
Power amplifiers
power amplifiers (PAs)
Power generation
Testing
Tuning
Voltage
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Summary:In this paper, the design, fabrication, and test of high-efficiency, high-power C-band harmonic-tuned power amplifiers in GaN technology is reported. The amplifier has been designed utilizing second-harmonic tuning for high-efficiency operation, thus exploiting the high-breakdown voltage peculiarity of GaN-based devices. Realized in a hybrid form, the amplifier has been characterized in terms of small-signal, power, and intermodulation (IMD) performance. An operating bandwidth over 20% around 5.5 GHz, with 33-dBm minimum output power, and 60% drain efficiency at center frequency is demonstrated, together with low IMD
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2006.874872