A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO sub(2 high-k gate dielectric)

Annealing effects on electrical characteristics and reliability of MOS device with HfO sub(2 or Ti/HfO) sub(2) high-k dielectric are studied in this work. For the sample with Ti/HfO sub(2 higher-k dielectric after a post-metallization annealing (PMA) at 600 [deg]C, its equivalent oxide thickness val...

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Bibliographic Details
Published in:Microelectronic engineering 2011-07, Vol.88 (7), p.1309-1311
Main Authors: Fu, CH, Chang-Liao, K S, Chang, YA, Hsu, Y Y, Tzeng, TH, Wang, T K, Heh, D W, Gu, P Y, Tsai, MJ
Format: Article
Language:English
Subjects:
Annealing
Density
Dielectrics
Equivalence
Hafnium oxide
MOS devices
Oxides
Titanium
Online Access:Get full text
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Summary:Annealing effects on electrical characteristics and reliability of MOS device with HfO sub(2 or Ti/HfO) sub(2) high-k dielectric are studied in this work. For the sample with Ti/HfO sub(2 higher-k dielectric after a post-metallization annealing (PMA) at 600 [deg]C, its equivalent oxide thickness value is 7.6 Aa and the leakage density is about 4.5 x 10[super]-2 A/cm[super]2. As the PMA is above 700 [deg]C, the electrical characteristics of MOS device would be severely degraded. For the sample with Ti/HfO) sub(2) higher-k dielectric, its equivalent oxide thickness value is 7.6 Aa and the leakage density is about 4.5 x 10[super]-2 A/cm[super]2.[inline image]
ISSN:0167-9317
DOI:10.1016/j.mee.2011.03.073