On the dynamic NBTI of the HfO sub(2 and HfSiON P-MOSFET)

Under typical dynamic NBTI conditions (7 MV/cm, 100 [deg]C), a progressive decrease in the recoverable component (R) of the HfO sub(2 p-MOSFET is observed but those of the HfSiON and SiON p-MOSFETs are found to remain constant. The decrease in the R of the HfO) sub(2) p-MOSFET is shown to be a resul...

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Bibliographic Details
Published in:Microelectronic engineering 2011-07, Vol.88 (7), p.1392-1395
Main Authors: Gao, Y, Ang, D S, Boo, A A, Teo, Z Q
Format: Article
Language:English
Subjects:
Dynamics
Evolution
Hafnium oxide
Hole traps
Niobium base alloys
Oxides
Silicon oxynitride
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Summary:Under typical dynamic NBTI conditions (7 MV/cm, 100 [deg]C), a progressive decrease in the recoverable component (R) of the HfO sub(2 p-MOSFET is observed but those of the HfSiON and SiON p-MOSFETs are found to remain constant. The decrease in the R of the HfO) sub(2) p-MOSFET is shown to be a result of its conversion into a permanent form. Under a given oxide field and temperature, the R of the HfO sub(2 p-MOSFET is found to exhibit the greatest tendency to be converted into a permanent form. This behavior is shown to be related to the evolution of hole traps in the HfO) sub(2) and could be explained in terms of the generally more ionic character of high-[kappa] dielectrics. Under a given NBTI condition, the stressed induced hole traps of the HfO sub(2 p-MOSFET is shown to exhibit a greater tendency to be transformed into a permanent form, as compared to those in the HfSiON and SiON p-MOSFETs. This behavior is attributed to the more ionic nature of high-[kappa] materials.[inline image])
ISSN:0167-9317
DOI:10.1016/j.mee.2011.03.031