Fabrication of Yb3+:Er3+ co-doped Al2O3 ridge waveguides by the dry etching

We present the fabrication process of straight-ridge Yb[super]3+:Er[super]3+ co-doped Al2O3 waveguides. Thin films are synthesized on silica-on-silicon wafers by middle frequency sputtering (MFS) and microwave ECR (MW-ECR) plasma source deposition. Waveguides are developed by reactive plasma etching...

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Bibliographic Details
Published in:Optical engineering 2007-05, Vol.46 (4)
Main Authors: Song, Qi, Gao, Jin-Song, Wang, Xiao-Yi, Chen, Hong, Zheng, Xuan-Ming, Wang, Tong-Tong, Li, Cheng-Ren, Song, Chang-Lie
Format: Article
Language:English
Subjects:
Aluminum oxide
Deposition
Gain
Microwaves
Noise levels
Pumps
Thin films
Waveguides
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Summary:We present the fabrication process of straight-ridge Yb[super]3+:Er[super]3+ co-doped Al2O3 waveguides. Thin films are synthesized on silica-on-silicon wafers by middle frequency sputtering (MFS) and microwave ECR (MW-ECR) plasma source deposition. Waveguides are developed by reactive plasma etching employing BCl3 gas. Photoluminescence (PL) spectrum and gain measurements at 1.53 [micro]m are investigated at room temperature: a net gain of 5.225 dB/cm is achieved from a 10.5-mm-long waveguide obtained by MFS, and 0.043 dB/cm is achieved from a MW-ECR with a 980-nm pump power of 62 mW.
ISSN:0091-3286
DOI:10.1117/1.2721529