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Materials and process aspect of cross-point RRAM (invited)
A survey of non-volatile and highly scalable cross-point memory in nanoscale resistive switching device is introduced. We present the basic operation of bipolar switching memory using combination between switching layer (HfO x /PCMO) and oxygen reservoir layer (ZrO x /AlO x ) and discuss the crucial...
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| Published in: | Microelectronic engineering 2011-07, Vol.88 (7), p.1113-1118 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c425t-3e99e5de70678f144cb846df7b541f3adf3fa06e54be812c7eb04b3d26dffe953 |
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| cites | cdi_FETCH-LOGICAL-c425t-3e99e5de70678f144cb846df7b541f3adf3fa06e54be812c7eb04b3d26dffe953 |
| container_end_page | 1118 |
| container_issue | 7 |
| container_start_page | 1113 |
| container_title | Microelectronic engineering |
| container_volume | 88 |
| creator | Lee, Joonmyoung Jo, Minseok Seong, Dong-jun Shin, Jungho Hwang, Hyunsang |
| description | A survey of non-volatile and highly scalable cross-point memory in nanoscale resistive switching device is introduced. We present the basic operation of bipolar switching memory using combination between switching layer (HfO
x
/PCMO) and oxygen reservoir layer (ZrO
x
/AlO
x
) and discuss the crucial issue for cross-point ReRAM. Based on the results, the applications of cross-point structure without any selection device were introduced. To evaluate the feasibility of cross-point ReRAM, read-out margin was calculated using PSPICE simulation. In addition, by the device scaling, three phenomena can be confirmed: (1) reset current reduction, (2) local heating effect and (3) significant improvement of uniformity. |
| doi_str_mv | 10.1016/j.mee.2011.03.035 |
| format | article |
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x
/PCMO) and oxygen reservoir layer (ZrO
x
/AlO
x
) and discuss the crucial issue for cross-point ReRAM. Based on the results, the applications of cross-point structure without any selection device were introduced. To evaluate the feasibility of cross-point ReRAM, read-out margin was calculated using PSPICE simulation. In addition, by the device scaling, three phenomena can be confirmed: (1) reset current reduction, (2) local heating effect and (3) significant improvement of uniformity.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2011.03.035</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Circuit properties ; Cross-point ; Design. Technologies. Operation analysis. Testing ; Devices ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Mathematical analysis ; Molecular electronics, nanoelectronics ; Nanocomposites ; Nanomaterials ; Nanostructure ; ReRAM ; Resistive switching ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Simulation ; Switching ; Switching, multiplexing, switched capacity circuits ; Variability</subject><ispartof>Microelectronic engineering, 2011-07, Vol.88 (7), p.1113-1118</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c425t-3e99e5de70678f144cb846df7b541f3adf3fa06e54be812c7eb04b3d26dffe953</citedby><cites>FETCH-LOGICAL-c425t-3e99e5de70678f144cb846df7b541f3adf3fa06e54be812c7eb04b3d26dffe953</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24284428$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lee, Joonmyoung</creatorcontrib><creatorcontrib>Jo, Minseok</creatorcontrib><creatorcontrib>Seong, Dong-jun</creatorcontrib><creatorcontrib>Shin, Jungho</creatorcontrib><creatorcontrib>Hwang, Hyunsang</creatorcontrib><title>Materials and process aspect of cross-point RRAM (invited)</title><title>Microelectronic engineering</title><description>A survey of non-volatile and highly scalable cross-point memory in nanoscale resistive switching device is introduced. We present the basic operation of bipolar switching memory using combination between switching layer (HfO
x
/PCMO) and oxygen reservoir layer (ZrO
x
/AlO
x
) and discuss the crucial issue for cross-point ReRAM. Based on the results, the applications of cross-point structure without any selection device were introduced. To evaluate the feasibility of cross-point ReRAM, read-out margin was calculated using PSPICE simulation. In addition, by the device scaling, three phenomena can be confirmed: (1) reset current reduction, (2) local heating effect and (3) significant improvement of uniformity.</description><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Cross-point</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Mathematical analysis</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>ReRAM</subject><subject>Resistive switching</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Simulation</subject><subject>Switching</subject><subject>Switching, multiplexing, switched capacity circuits</subject><subject>Variability</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kF1LwzAUhoMoOD9-gHe9EfWiNWmSJtWrMfyCDWHodUiTE8jo2pp0A_-9mRteCifkBJ7znjcvQlcEFwST6n5VrAGKEhNSYJqKH6EJkYLmnFfyGE0SI_KaEnGKzmJc4fRmWE7Qw0KPELxuY6Y7mw2hNxBTHwcwY9a7zIQ-xnzofTdmy-V0kd36butHsHcX6MSlObg83Ofo8_npY_aaz99f3mbTeW5YycecQl0DtyBwJaQjjJlGsso60XBGHNXWUadxBZw1IElpBDSYNdSWiXFQc3qObva6ydzXBuKo1j4aaFvdQb-JSsqaEVZxnEiyJ39NB3BqCH6tw7ciWO1iUiuVYlK7mBSmqXbq1wd1HY1uXdCd8fFvsGSlZOkk7nHPQfrq1kNQ0XjoDFgfUlTK9v6fLT-0v3wa</recordid><startdate>20110701</startdate><enddate>20110701</enddate><creator>Lee, Joonmyoung</creator><creator>Jo, Minseok</creator><creator>Seong, Dong-jun</creator><creator>Shin, Jungho</creator><creator>Hwang, Hyunsang</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20110701</creationdate><title>Materials and process aspect of cross-point RRAM (invited)</title><author>Lee, Joonmyoung ; Jo, Minseok ; Seong, Dong-jun ; Shin, Jungho ; Hwang, Hyunsang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c425t-3e99e5de70678f144cb846df7b541f3adf3fa06e54be812c7eb04b3d26dffe953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Circuit properties</topic><topic>Cross-point</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Devices</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>Mathematical analysis</topic><topic>Molecular electronics, nanoelectronics</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>ReRAM</topic><topic>Resistive switching</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Simulation</topic><topic>Switching</topic><topic>Switching, multiplexing, switched capacity circuits</topic><topic>Variability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Joonmyoung</creatorcontrib><creatorcontrib>Jo, Minseok</creatorcontrib><creatorcontrib>Seong, Dong-jun</creatorcontrib><creatorcontrib>Shin, Jungho</creatorcontrib><creatorcontrib>Hwang, Hyunsang</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Joonmyoung</au><au>Jo, Minseok</au><au>Seong, Dong-jun</au><au>Shin, Jungho</au><au>Hwang, Hyunsang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Materials and process aspect of cross-point RRAM (invited)</atitle><jtitle>Microelectronic engineering</jtitle><date>2011-07-01</date><risdate>2011</risdate><volume>88</volume><issue>7</issue><spage>1113</spage><epage>1118</epage><pages>1113-1118</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><coden>MIENEF</coden><abstract>A survey of non-volatile and highly scalable cross-point memory in nanoscale resistive switching device is introduced. We present the basic operation of bipolar switching memory using combination between switching layer (HfO
x
/PCMO) and oxygen reservoir layer (ZrO
x
/AlO
x
) and discuss the crucial issue for cross-point ReRAM. Based on the results, the applications of cross-point structure without any selection device were introduced. To evaluate the feasibility of cross-point ReRAM, read-out margin was calculated using PSPICE simulation. In addition, by the device scaling, three phenomena can be confirmed: (1) reset current reduction, (2) local heating effect and (3) significant improvement of uniformity.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2011.03.035</doi><tpages>6</tpages></addata></record> |
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| ispartof | Microelectronic engineering, 2011-07, Vol.88 (7), p.1113-1118 |
| issn | 0167-9317 1873-5568 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_889414650 |
| source | ScienceDirect Freedom Collection 2022-2024 |
| subjects | Applied sciences Circuit properties Cross-point Design. Technologies. Operation analysis. Testing Devices Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Mathematical analysis Molecular electronics, nanoelectronics Nanocomposites Nanomaterials Nanostructure ReRAM Resistive switching Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Simulation Switching Switching, multiplexing, switched capacity circuits Variability |
| title | Materials and process aspect of cross-point RRAM (invited) |
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