Optical and structural properties of Pb sub(1-xEu) sub(x)Te/CdTe//GaAs (0 0 1) heterostructures grown by MBE

MBE growth conditions, SEM and XRD structural characterization and experimental studies of optical properties are presented for Pb sub(1-xEu) sub(x)Te/CdTe semiconductor heterostructures grown on GaAs (0 0 1) substrate with a thick CdTe buffer layer. Photoluminescence excited by pulsed YAG:Nd laser...

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Bibliographic Details
Published in:Journal of crystal growth 2011-05, Vol.323 (1), p.140-143
Main Authors: Smajek, E, Szot, M, Kowalczyk, L, Domukhovski, V, Taliashvili, B, Dziawa, P, Knoff, W, Lusakowska, E, Reszka, A, Kowalski, B, Wiater, M, Wojtowicz, T, Story, T
Format: Article
Language:English
Subjects:
Cadmium tellurides
Gallium arsenide
Gallium arsenides
Heterostructures
Molecular beam epitaxy
Optical properties
Photoluminescence
Semiconductors
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Summary:MBE growth conditions, SEM and XRD structural characterization and experimental studies of optical properties are presented for Pb sub(1-xEu) sub(x)Te/CdTe semiconductor heterostructures grown on GaAs (0 0 1) substrate with a thick CdTe buffer layer. Photoluminescence excited by pulsed YAG:Nd laser was studied in the mid-infrared spectral region for 12.5 nm-thick Pb sub(1-xEu) sub(x)Te quantum wells (x=0-0.038) with 75 nm-thick CdTe barriers. Increasing the Eu content up to about 4 at% permitted large infrared photoluminescence tuning from 0.34 to 0.465 eV due to the increase in Pb sub(1-xEu) sub(x)Te bandgap.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2010.11.150