Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature

• Published in: Journal of crystal growth 2011-05, Vol.323 (1), p.167-171
• Main Authors: Ngo, C.Y., Yoon, S.F., Tanoto, H., Hui, H.K., Lim, D.R., Wong, Vincent, Chua, S.J.
• Format: Article
• Language: English
• Subjects: A1. Nanostructures; A3. Molecular beam epitaxy; B1. Arsenates; B1. Nanomaterials; B2. Semiconducting III–V materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Crystal growth; Density; Emission; Exact sciences and technology; Gallium arsenide; Materials science; Nanoscale materials and structures: fabrication and characterization; Optical properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Optical properties of specific thin films; Other semiconductors; Physics; Quantum dots; Spacers; Specific materials; Wavelengths
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2010.11.161

Bilayer quantum dots (BQDs) are interesting structures for long wavelength emission due to its ability to tune the areal density and dot size separately. However, wide implementation of BQDs is hindered by the complicated growth procedures, which involve two sets of growth rate and temperature for the respective QD layers. We had recently reported the optical properties of the BQDs grown at constant growth rate and temperature [Appl. Phys. Lett. 95 (2009) 181913]. In this work, we investigate the effects of GaAs spacer thickness and InxGa1−xAs strain-reducing layer on the structural and optical properties of such BQDs.