Quantum dot lasers grown by gas source molecular-beam epitaxy

• Published in: Journal of crystal growth 2011-05, Vol.323 (1), p.450-453
• Main Authors: Gong, Q., Chen, P., Li, S.G., Lao, Y.F., Cao, C.F., Xu, C.F., Zhang, Y.G., Feng, S.L., Ma, C.H., Wang, H.L.
• Format: Article
• Language: English
• Subjects: A3. Gas source molecular-beam epitaxy; B2. GaAs; B2. InAs; B2. InP; B3. Quantum dot lasers; B3. Semiconductor lasers; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Gallium arsenide; Gallium arsenides; Indium arsenides; Indium phosphides; Lasers; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Nanoscale materials and structures: fabrication and characterization; Other semiconductors; Physics; Quantum dots; Specific materials; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2010.12.014

We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1.10μm and 1.54–1.70μm wavelength region. More than 50mW optical power was collected from one facet of the InAs/GaAs quantum dot lasers at 20°C, while for InAs/InP quantum dot lasers the maximum output power was measured as 30mW. For InAs/InP material system, by increasing the layer thickness of deposited InAs from 3.0 to 3.5 monolayers, the lasing wavelength can be extended from 1.5–1.6μm to 1.6–1.7μm. Moreover, a tunable quantum dot external cavity laser was demonstrated, utilizing the broad gain profile of InAs quantum dots.