Mechanism Analysis of Off-Leakage Current in an LDD Poly-Si TFT Using Activation Energy

We have analyzed the mechanism of off-leakage current in an lightly doped drain (LDD) poly-Si thin-film transistor by investigating the activation energy Ea . It is found that Ea decreases as the gate and drain voltages increase. We have also discussed the mechanism using a device simulator. It is f...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2011-06, Vol.32 (6), p.764-766
Main Authors: Nakashima, A, Kimura, M
Format: Article
Language:English
Subjects:
Activation energy
Applied sciences
Channels
Compound structure devices
Devices
Drains
Electric potential
Electrical junctions
Electronics
Exact sciences and technology
Junctions
Leakage current
lightly doped drain (LDD)
Logic gates
mechanism analysis
off-leakage current
poly-Si
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature dependence
Temperature measurement
Thin film transistors
thin-film transistor (TFT)
Transistors
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have analyzed the mechanism of off-leakage current in an lightly doped drain (LDD) poly-Si thin-film transistor by investigating the activation energy Ea . It is found that Ea decreases as the gate and drain voltages increase. We have also discussed the mechanism using a device simulator. It is found that a hole channel is lightly formed in the LDD region, and a pseudo p-n junction appears at the junction between the LDD and drain regions. The aforementioned experimental behavior of Ea is because the electric field increases there. These results suggest that the off-leakage current is caused by the phonon-assisted tunneling with Poole-Frenkel effect at the junction between the LDD and drain regions.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2132112