Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

InGaN/GaN quantum wells (QWs) with symmetrical ultra thin (about 0.5nm) low temperature GaN (LT-GaN) layers bounding each InGaN layer were grown by metal-organic vapor phase epitaxy (MOVPE). From the high resolution X-ray diffraction (HR-XRD) measurement, it showed improved well-barrier interface ab...

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Bibliographic Details
Published in:Journal of crystal growth 2011-03, Vol.318 (1), p.509-512
Main Authors: Tao, Y.B., Chen, Z.Z., Yu, T.J., Yin, Y., Kang, X.N., Yang, Z.J., Ran, G.Z., Zhang, G.Y.
Format: Article
Language:English
Subjects:
A1. Atom force microscopy
A1. Photoluminescence
A1. X-ray diffractometry
A3. MOCVD
A3. Multiple quantum wells
B1. Nitrides
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Density
Exact sciences and technology
Gallium nitrides
Indium
Indium gallium nitrides
Luminescence
Materials science
Nanoscale materials and structures: fabrication and characterization
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Other luminescence and radiative recombination
Other semiconductors
Photoluminescence
Physics
Quantum wells
Specific materials
Thin films
Vanadium
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Summary:InGaN/GaN quantum wells (QWs) with symmetrical ultra thin (about 0.5nm) low temperature GaN (LT-GaN) layers bounding each InGaN layer were grown by metal-organic vapor phase epitaxy (MOVPE). From the high resolution X-ray diffraction (HR-XRD) measurement, it showed improved well-barrier interface abruptness compared to the reference MQWs without the LT-GaN layers. In addition, the V-defect density and surface roughness were reduced, especially with the depth of V-defect as low as 0.7nm. Based on the temperature dependence photoluminescence (TDPL) experiments, the internal quantum efficiency (IQE) was increased from 21.2% to 30.1% by inserting the LT-GaN layers. The carrier lifetime obtained from room temperature time resolved photoluminescence (TRPL) measurement was 7.95ns, which was longer than 5.34ns for reference MQWs. These results indicated that these additional symmetrical thin LT-GaN layers enhanced the mobility of indium and gallium atoms as well as suppressed the indium desorption for growth high quality InGaN layers and in turn improved its structural and luminescence properties.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2010.10.031