Role of growth mode in the formation of magnetic properties of InMnAs grown by MOVPE

• Published in: Journal of crystal growth 2011-03, Vol.318 (1), p.576-579
• Main Authors: Novák, J., Vávra, I., Hasenöhrl, S., Reiffers, M., Štrichovanec, P., Magen, C.
• Format: Article
• Language: English
• Subjects: A3. Metalorganic vapor phase epitaxy; A3. Quantum dots; B2. Ferromagnetic semiconductors; B2. Semiconducting III–V materials; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal growth; Curie temperature; Epitaxial layers; Exact sciences and technology; Low pressure; Magnetic properties; Magnetization; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of film growth; Thin film structure and morphology; Vapor phase epitaxy; Vapor phase epitaxy; growth from vapor phase; Zinc
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2010.10.023

The magnetic and structural properties of InMnAs self-assembled dots and epitaxial layers prepared from the identical composition of the gas phase were investigated. All structures under study were grown by low pressure metal organic vapor phase epitaxy at the growth temperature of 500°C. Magnetization measurements indicated that the Curie temperature of InMnAs dots prepared under the Stranski–Krastanov growth mode varied from 7 to 235K in relation to the material composition. The Curie temperature of epitaxial layers prepared under layer by layer growth mode was found to be independent from the material composition. Transmission electron microscopy and microstructure analysis revealed that the dots have a zinc blende structure and they are plastically relaxed.