Loading…
Role of growth mode in the formation of magnetic properties of InMnAs grown by MOVPE
The magnetic and structural properties of InMnAs self-assembled dots and epitaxial layers prepared from the identical composition of the gas phase were investigated. All structures under study were grown by low pressure metal organic vapor phase epitaxy at the growth temperature of 500°C. Magnetizat...
Saved in:
Published in: | Journal of crystal growth 2011-03, Vol.318 (1), p.576-579 |
---|---|
Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c374t-7497d845d28dedb75d6ad4ee82e0006f5e71114150ba8a7e2d17b5ae946a8c333 |
---|---|
cites | cdi_FETCH-LOGICAL-c374t-7497d845d28dedb75d6ad4ee82e0006f5e71114150ba8a7e2d17b5ae946a8c333 |
container_end_page | 579 |
container_issue | 1 |
container_start_page | 576 |
container_title | Journal of crystal growth |
container_volume | 318 |
creator | Novák, J. Vávra, I. Hasenöhrl, S. Reiffers, M. Štrichovanec, P. Magen, C. |
description | The magnetic and structural properties of InMnAs self-assembled dots and epitaxial layers prepared from the identical composition of the gas phase were investigated. All structures under study were grown by low pressure metal organic vapor phase epitaxy at the growth temperature of 500°C. Magnetization measurements indicated that the Curie temperature of InMnAs dots prepared under the Stranski–Krastanov growth mode varied from 7 to 235K in relation to the material composition. The Curie temperature of epitaxial layers prepared under layer by layer growth mode was found to be independent from the material composition. Transmission electron microscopy and microstructure analysis revealed that the dots have a zinc blende structure and they are plastically relaxed. |
doi_str_mv | 10.1016/j.jcrysgro.2010.10.023 |
format | article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_889435054</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024810007530</els_id><sourcerecordid>889435054</sourcerecordid><originalsourceid>FETCH-LOGICAL-c374t-7497d845d28dedb75d6ad4ee82e0006f5e71114150ba8a7e2d17b5ae946a8c333</originalsourceid><addsrcrecordid>eNqFkE1PAyEQhonRxPrxFwwX42krsLBLbzaNX4mmxqhXQmHW0uxChVXTfy9r1asXJnnnfZiZF6ETSsaU0Op8NV6ZuEmvMYwZ-RbHhJU7aERlXRaCELaLRvllBWFc7qODlFaEZJKSEXp6DC3g0OCMf_ZL3AUL2HncLwE3IXa6d8EP_U6_euidwesY1hB7B2mQb_29n6Zv2uPFBt_PXx4uj9Beo9sExz_1ED1fXT7Nboq7-fXtbHpXmLLmfVHzSW0lF5ZJC3ZRC1tpywEkg7xf1QioKaWcCrLQUtfALK0XQsOEV1qasiwP0dn237zT2zukXnUuGWhb7SG8JyXlhJeCCJ6d1dZpYkgpQqPW0XU6bhQlakhRrdRvimpIcdBzihk8_Rmhk9FtE7U3Lv3RjBMmBBXZd7H1Qb73w0FUyTjwBqyLYHplg_tv1BdDe4sj</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>889435054</pqid></control><display><type>article</type><title>Role of growth mode in the formation of magnetic properties of InMnAs grown by MOVPE</title><source>ScienceDirect Journals</source><creator>Novák, J. ; Vávra, I. ; Hasenöhrl, S. ; Reiffers, M. ; Štrichovanec, P. ; Magen, C.</creator><creatorcontrib>Novák, J. ; Vávra, I. ; Hasenöhrl, S. ; Reiffers, M. ; Štrichovanec, P. ; Magen, C.</creatorcontrib><description>The magnetic and structural properties of InMnAs self-assembled dots and epitaxial layers prepared from the identical composition of the gas phase were investigated. All structures under study were grown by low pressure metal organic vapor phase epitaxy at the growth temperature of 500°C. Magnetization measurements indicated that the Curie temperature of InMnAs dots prepared under the Stranski–Krastanov growth mode varied from 7 to 235K in relation to the material composition. The Curie temperature of epitaxial layers prepared under layer by layer growth mode was found to be independent from the material composition. Transmission electron microscopy and microstructure analysis revealed that the dots have a zinc blende structure and they are plastically relaxed.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2010.10.023</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A3. Metalorganic vapor phase epitaxy ; A3. Quantum dots ; B2. Ferromagnetic semiconductors ; B2. Semiconducting III–V materials ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystal growth ; Curie temperature ; Epitaxial layers ; Exact sciences and technology ; Low pressure ; Magnetic properties ; Magnetization ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Theory and models of film growth ; Thin film structure and morphology ; Vapor phase epitaxy ; Vapor phase epitaxy; growth from vapor phase ; Zinc</subject><ispartof>Journal of crystal growth, 2011-03, Vol.318 (1), p.576-579</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c374t-7497d845d28dedb75d6ad4ee82e0006f5e71114150ba8a7e2d17b5ae946a8c333</citedby><cites>FETCH-LOGICAL-c374t-7497d845d28dedb75d6ad4ee82e0006f5e71114150ba8a7e2d17b5ae946a8c333</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24025515$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Novák, J.</creatorcontrib><creatorcontrib>Vávra, I.</creatorcontrib><creatorcontrib>Hasenöhrl, S.</creatorcontrib><creatorcontrib>Reiffers, M.</creatorcontrib><creatorcontrib>Štrichovanec, P.</creatorcontrib><creatorcontrib>Magen, C.</creatorcontrib><title>Role of growth mode in the formation of magnetic properties of InMnAs grown by MOVPE</title><title>Journal of crystal growth</title><description>The magnetic and structural properties of InMnAs self-assembled dots and epitaxial layers prepared from the identical composition of the gas phase were investigated. All structures under study were grown by low pressure metal organic vapor phase epitaxy at the growth temperature of 500°C. Magnetization measurements indicated that the Curie temperature of InMnAs dots prepared under the Stranski–Krastanov growth mode varied from 7 to 235K in relation to the material composition. The Curie temperature of epitaxial layers prepared under layer by layer growth mode was found to be independent from the material composition. Transmission electron microscopy and microstructure analysis revealed that the dots have a zinc blende structure and they are plastically relaxed.</description><subject>A3. Metalorganic vapor phase epitaxy</subject><subject>A3. Quantum dots</subject><subject>B2. Ferromagnetic semiconductors</subject><subject>B2. Semiconducting III–V materials</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal growth</subject><subject>Curie temperature</subject><subject>Epitaxial layers</subject><subject>Exact sciences and technology</subject><subject>Low pressure</subject><subject>Magnetic properties</subject><subject>Magnetization</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Theory and models of film growth</subject><subject>Thin film structure and morphology</subject><subject>Vapor phase epitaxy</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><subject>Zinc</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkE1PAyEQhonRxPrxFwwX42krsLBLbzaNX4mmxqhXQmHW0uxChVXTfy9r1asXJnnnfZiZF6ETSsaU0Op8NV6ZuEmvMYwZ-RbHhJU7aERlXRaCELaLRvllBWFc7qODlFaEZJKSEXp6DC3g0OCMf_ZL3AUL2HncLwE3IXa6d8EP_U6_euidwesY1hB7B2mQb_29n6Zv2uPFBt_PXx4uj9Beo9sExz_1ED1fXT7Nboq7-fXtbHpXmLLmfVHzSW0lF5ZJC3ZRC1tpywEkg7xf1QioKaWcCrLQUtfALK0XQsOEV1qasiwP0dn237zT2zukXnUuGWhb7SG8JyXlhJeCCJ6d1dZpYkgpQqPW0XU6bhQlakhRrdRvimpIcdBzihk8_Rmhk9FtE7U3Lv3RjBMmBBXZd7H1Qb73w0FUyTjwBqyLYHplg_tv1BdDe4sj</recordid><startdate>20110301</startdate><enddate>20110301</enddate><creator>Novák, J.</creator><creator>Vávra, I.</creator><creator>Hasenöhrl, S.</creator><creator>Reiffers, M.</creator><creator>Štrichovanec, P.</creator><creator>Magen, C.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110301</creationdate><title>Role of growth mode in the formation of magnetic properties of InMnAs grown by MOVPE</title><author>Novák, J. ; Vávra, I. ; Hasenöhrl, S. ; Reiffers, M. ; Štrichovanec, P. ; Magen, C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c374t-7497d845d28dedb75d6ad4ee82e0006f5e71114150ba8a7e2d17b5ae946a8c333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>A3. Metalorganic vapor phase epitaxy</topic><topic>A3. Quantum dots</topic><topic>B2. Ferromagnetic semiconductors</topic><topic>B2. Semiconducting III–V materials</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal growth</topic><topic>Curie temperature</topic><topic>Epitaxial layers</topic><topic>Exact sciences and technology</topic><topic>Low pressure</topic><topic>Magnetic properties</topic><topic>Magnetization</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Theory and models of film growth</topic><topic>Thin film structure and morphology</topic><topic>Vapor phase epitaxy</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><topic>Zinc</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Novák, J.</creatorcontrib><creatorcontrib>Vávra, I.</creatorcontrib><creatorcontrib>Hasenöhrl, S.</creatorcontrib><creatorcontrib>Reiffers, M.</creatorcontrib><creatorcontrib>Štrichovanec, P.</creatorcontrib><creatorcontrib>Magen, C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Novák, J.</au><au>Vávra, I.</au><au>Hasenöhrl, S.</au><au>Reiffers, M.</au><au>Štrichovanec, P.</au><au>Magen, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of growth mode in the formation of magnetic properties of InMnAs grown by MOVPE</atitle><jtitle>Journal of crystal growth</jtitle><date>2011-03-01</date><risdate>2011</risdate><volume>318</volume><issue>1</issue><spage>576</spage><epage>579</epage><pages>576-579</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The magnetic and structural properties of InMnAs self-assembled dots and epitaxial layers prepared from the identical composition of the gas phase were investigated. All structures under study were grown by low pressure metal organic vapor phase epitaxy at the growth temperature of 500°C. Magnetization measurements indicated that the Curie temperature of InMnAs dots prepared under the Stranski–Krastanov growth mode varied from 7 to 235K in relation to the material composition. The Curie temperature of epitaxial layers prepared under layer by layer growth mode was found to be independent from the material composition. Transmission electron microscopy and microstructure analysis revealed that the dots have a zinc blende structure and they are plastically relaxed.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2010.10.023</doi><tpages>4</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0022-0248 |
ispartof | Journal of crystal growth, 2011-03, Vol.318 (1), p.576-579 |
issn | 0022-0248 1873-5002 |
language | eng |
recordid | cdi_proquest_miscellaneous_889435054 |
source | ScienceDirect Journals |
subjects | A3. Metalorganic vapor phase epitaxy A3. Quantum dots B2. Ferromagnetic semiconductors B2. Semiconducting III–V materials Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystal growth Curie temperature Epitaxial layers Exact sciences and technology Low pressure Magnetic properties Magnetization Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film structure and morphology Vapor phase epitaxy Vapor phase epitaxy growth from vapor phase Zinc |
title | Role of growth mode in the formation of magnetic properties of InMnAs grown by MOVPE |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T16%3A12%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Role%20of%20growth%20mode%20in%20the%20formation%20of%20magnetic%20properties%20of%20InMnAs%20grown%20by%20MOVPE&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Nov%C3%A1k,%20J.&rft.date=2011-03-01&rft.volume=318&rft.issue=1&rft.spage=576&rft.epage=579&rft.pages=576-579&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/10.1016/j.jcrysgro.2010.10.023&rft_dat=%3Cproquest_cross%3E889435054%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c374t-7497d845d28dedb75d6ad4ee82e0006f5e71114150ba8a7e2d17b5ae946a8c333%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=889435054&rft_id=info:pmid/&rfr_iscdi=true |