Room-Temperature Low-Dimensional Effects in Pi-Gate SOI MOSFETs

Evidence of a one-dimensional subband formation is found in Pi-gate SOI MOSFETs at room temperature as oscillations are found in the I D (V G ) characteristics. These oscillations correspond to an intersubband scattering. Even though the height-to-width ratio of the silicon fins is equal to five, th...

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Bibliographic Details
Published in:IEEE electron device letters 2006-09, Vol.27 (9), p.775-777
Main Authors: Colinge, J.P., Weize Xiong, Cleavelin, C.R., Schulz, T., Schrufer, K., Matthews, K., Patruno, P.
Format: Article
Language:English
Subjects:
Applied sciences
Devices
Electronics
Electrons
Etching
Exact sciences and technology
Fins
Lithography
Mathematical models
MOSFETs
Oscillations
Particle scattering
quantum wires
Semiconductor device measurement
semiconductor device measurements
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Silicon
Silicon on insulator technology
silicon-on-insulator (SOI) technology
Temperature
Transistors
Two dimensional
Wires
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Summary:Evidence of a one-dimensional subband formation is found in Pi-gate SOI MOSFETs at room temperature as oscillations are found in the I D (V G ) characteristics. These oscillations correspond to an intersubband scattering. Even though the height-to-width ratio of the silicon fins is equal to five, the device behavior is better described by a one-dimensional semiconductor theory than by a two-dimensional gas model
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.881086