Radiation resistance of single-frequency 1310-nm AlGaInAs-InP grating-outcoupled surface-emitting lasers

The results of two irradiation tests on 14 single-frequency 1310-nm grating-outcoupled surface-emitting semiconductor lasers that have been exposed to ionizing radiation using 200-MeV/c proton beams are reported. Twelve powered lasers survived a total radiation dose of up to 22.3 Mrad. One of the tw...

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Bibliographic Details
Published in:IEEE photonics technology letters 2006-01, Vol.18 (1), p.148-150
Main Authors: Jingbo Ye, Tiankuan Liu, Stroynowski, R., Wakeland, B.E., Xiang, A.C., Amarasinghe, N., McWilliams, S., Masood, T., Evans, G.
Format: Article
Language:English
Subjects:
Annealing
Gratings
high-energy physics
Immune system
Ionizing radiation
Irradiation
Laser theory
Lasers
Particle beams
Particle physics
Power lasers
Proton beams
radiation hard
Semiconductor device testing
Semiconductor lasers
space applications
Surface emitting lasers
Surface resistance
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Summary:The results of two irradiation tests on 14 single-frequency 1310-nm grating-outcoupled surface-emitting semiconductor lasers that have been exposed to ionizing radiation using 200-MeV/c proton beams are reported. Twelve powered lasers survived a total radiation dose of up to 22.3 Mrad. One of the two not-powered lasers survived a total dose of 1.5 Mrad. The other failed after an integrated dose of 22.3 Mrad, suggesting that annealing may play an important role in laser performance during irradiation. The static and dynamic characteristics of the lasers after irradiation indicate the suitability of these lasers for medical, space, and accelerator-based nuclear and particle physics applications.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2005.860055