Initiated chemical vapor deposition of poly(2-hydroxyethyl methacrylate) hydrogels

Initiated chemical vapor deposition (iCVD), a low temperature variant of hot-wire chemical vapor deposition (HWCVD) is a solvent-free polymerization technique. It was used to synthesize thick, free-standing films of the hydrogel poly(2-hydroxyethyl methacrylate) (PHEMA). In this work, we show that t...

Full description

Saved in:
Bibliographic Details
Published in:Thin solid films 2011-05, Vol.519 (14), p.4415-4417
Main Authors: Bose, Ranjita K., Lau, Kenneth K.S.
Format: Article
Language:English
Subjects:
Applied sciences
Cell adhesion
Chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Cytotoxicity
Entrainment
Exact sciences and technology
Hydrogel
Hydrogels
iCVD
Materials science
Mechanical and acoustical properties
Methods of deposition of films and coatings
film growth and epitaxy
Monomers
Organic polymers
PHEMA
Physical properties of thin films, nonelectronic
Physicochemistry of polymers
Physics
Properties and characterization
Protein adsorption
Solid surfaces and solid-solid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thick films
Thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Initiated chemical vapor deposition (iCVD), a low temperature variant of hot-wire chemical vapor deposition (HWCVD) is a solvent-free polymerization technique. It was used to synthesize thick, free-standing films of the hydrogel poly(2-hydroxyethyl methacrylate) (PHEMA). In this work, we show that the iCVD technique can yield PHEMA which is free from residual entrained monomer, has low non-specific protein adsorption and is capable of supporting good cell adhesion and proliferation.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2011.01.288